查看完整版本: 【目前最全的ZnO综述文章】A comprehensive review of ZnO materials and devices

【目前最全的ZnO综述文章】A comprehensive review of ZnO materials and devices

【目前最全的ZnO综述文章】A comprehensive review of ZnO materials and devices2Fm ?zk
A comprehensive review of ZnO materials and devices V`]J6Ypb
Ü. Özgür,a
Ya. I. Alivov, C. Liu, A. Teke,b
M. A. Reshchikov, S. Doğan,c
V. Avrutin,-?i{pa-DG+h
S.-J. Cho, and H. Morkoçd
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Department of Electrical Engineering and Physics Department, Virginia Commonwealth University,
Gl0H ]P ~Lo Richmond, Virginia 23284-3072
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Received 2 February 2005; accepted 13 June 2005; published online 30 August 2005}9e.S/}D'P
The semiconductor ZnO has gained substantial interest in the research community in part becausep7uyNGBr4U(Kii
of its large exciton binding energy
60 meV which could lead to lasing action based on excitonu/uU4t1Xib
recombination even above room temperature. Even though research focusing on ZnO goes back
@8]R
^sk~K many decades, the renewed interest is fueled by availability of high-quality substrates and reports of+n?jd ~HV
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p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which)n3kX8h-n
remain controversial. It is this renewed interest in ZnO which forms the basis of this review. AsJKk4F/fA
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mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter
i%S'[GNZ$c{:s9I dating back to 1935 by Bunn Proc. Phys. Soc. London 47, 836
1935, studies of its vibrational F3w^|t
properties with Raman scattering in 1966 by Damen et al. Phys. Rev. 142, 570
1966, detailedZ.L.np G-gq
optical studies in 1954 by Mollwo Z. Angew. Phys. 6, 257
1954, and its growth by]E+e8?U0|
chemical-vapor transport in 1970 by Galli and Coker Appl. Phys. Lett. 16, 439
1970. In terms-FU9]Z*@$w'[ _y(y
of devices, Au Schottky barriers in 1965 by Mead Phys. Lett. 18, 218
1965, demonstration of
1c E'v6|&[5}/g6r-{ light-emitting diodes
1967 by Drapak Semiconductors 2, 624
1968, in which Cu2O was used
c![8O
s]"vY1h as the p-type material, metal-insulator-semiconductor structures
1974 by Minami et al. Jpn. J.C VRT2ql
Appl. Phys. 13, 1475
1974, ZnO/ZnSe n-p junctions
1975 by Tsurkan et al. Semiconductors:ZJU]d"G7y8@ Y7qm
6, 1183
1975, and Al/Au Ohmic contacts by Brillson J. Vac. Sci. Technol. 15, 1378
1978
v#u
Iz4bp were attained. The main obstacle to the development of ZnO has been the lack of reproducible and
~&\@+X!GJ"S low-resistivity p-type ZnO, as recently discussed by Look and Claflin Phys. Status Solidi B 241,

@8J%|L)Yg5Tq 624
2004. While ZnO already has many industrial applications owing to its piezoelectric
U%n[g$c.N| JhL properties and band gap in the near ultraviolet, its applications to optoelectronic devices has not yet
$c ixW:j+}K&c2[ materialized due chiefly to the lack of p-type epitaxial layers. Very high quality what used to be
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r called whiskers and platelets, the nomenclature for which gave way to nanostructures of late, have
'~/c(o:Y BJ.l been prepared early on and used to deduce much of the principal properties of this material, v&DKH"mM
particularly in terms of optical processes. The suggestion of attainment of p-type conductivity in theJ/T4Dp(l0]4yV'Q
last few years has rekindled the long-time, albeit dormant, fervor of exploiting this material for
lOy2n8h0^ v optoelectronic applications. The attraction can simply be attributed to the large exciton binding"p0}N@;~6i f0Z
energy of 60 meV of ZnO potentially paving the way for efficient room-temperature exciton-based8z(a_!O,s$[M1{(H
emitters, and sharp transitions facilitating very low threshold semiconductor lasers. The field is alsoa.W|)b3E$c
fueled by theoretical predictions and perhaps experimental confirmation of ferromagnetism at room
Jt!dI3i temperature for potential spintronics applications. This review gives an in-depth discussion of the
;x1`3z {S3E mechanical, chemical, electrical, and optical properties of ZnO in addition to the technological
-mdKU-s,F issues such as growth, defects, p-type doping, band-gap engineering, devices, and nanostructures.?{0`IX^j
© 2005 American Institute of Physics. DOI: 10.1063/1.1992666
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