查看完整版本: 最新的关于wide band gap semiconductor 的综述

最新的关于wide band gap semiconductor 的综述

Wide band gap semiconductors: present status, future prospects and frontiers
22/10/2007
You can now read an excellent new cluster of review articles entitled 'Wide band gap semiconductors: present status, future prospects and frontiers'. The articles are available in Journal of Physics D: Applied Physics and you can access them for free until 31 December 2007.
The cluster contains 22 review articles written by leading researchers in the field, covering growth and doping; surfaces, interfaces and defects; nanostructures and nanotechnology; and sensors, devices and biomedical applications.

Guest Editor Patrick Soukiassian writes in his editorial that the articles form a 'good basis to evaluate the present status and future prospects of this promising and exciting field of science and technology'.

To read the articles in this cluster issue, follow the link below:

[url]http://www.iop.org/EJ/toc/0022-3727/40/20[/url]

看起来不错的文献

下面是文献

给大家共享一下吧

[url]http://www.isload.com.cn/store/sisj7404nzqjs/d7_20_e01.pdf/downlaod[/url]

回复 1# 的帖子

该期专题为SPECIAL CLUSTER OF REVIEW ARTICLES ON WIDE BAND GAP SEMICONDUCTORS
具体内容见以下：
EDITORIAL
  Wide band gap semiconductors: present status, future prospects and frontiers
Patrick G Soukiassian (Guest Editor)

  
REVIEW ARTICLES
  
[b]GROWTH AND DOPING[/b]
Reviews Growth and characterization of 3C–SiC and 2H–AlN/GaN films and devices produced on step-free 4H–SiC mesa substrates
P G Neudeck, H Du, M Skowronski, D J Spry and A J Trunek

Reviews Status of SiC bulk growth processes
D Chaussende, P J Wellmann and M Pons

Reviews Nucleation, growth and characterization of cubic boron nitride (cBN) films
W J Zhang, Y M Chong, I Bello and S T Lee

Reviews High quality MPACVD diamond single crystal growth: high microwave power density regime
J Achard, F Silva, A Tallaire, X Bonnin, G Lombardi, K Hassouni and A Gicquel
   
Reviews n-type diamond growth by phosphorus doping on (0 0 1)-oriented surface
Hiromitsu Kato, Toshiharu Makino, Satoshi Yamasaki and Hideyo Okushi
   
  
[b]SURFACES, INTERFACES AND DEFECTS[/b]
Reviews Atomic scale study of the chemistry of oxygen, hydrogen and water at SiC surfaces
Fabrice Amy

Reviews Modifications of cubic SiC surfaces studied by ab initio simulations: from gas adsorption to organic functionalization
Alessandra Catellani and Giancarlo Cicero

Reviews Original Ge-induced phenomena on various SiC(0 0 0 1) reconstructions
K Aït-Mansour, D Dentel, L Kubler, M Diani, M Derivaz and J L Bischoff

Reviews The mechanism of defect creation and passivation at the SiC/SiO2 interface
Peter Deák, Jan M Knaup, Tamás Hornos, Christoph Thill, Adam Gali and Thomas Frauenheim
   
Reviews Growth of SiO2 on SiC by dry thermal oxidation: mechanisms
I Vickridge, J Ganem, Y Hoshino and I Trimaille

Reviews Optical investigation methods for SiC device development: application to stacking faults diagnostic in active epitaxial layers
J Camassel and S Juillaguet
  
[b]NANOSTRUCTURES AND NANOTECHNOLOGY[/b]
Reviews Closed-packed and well-aligned carbon nanotube films on SiC
M Kusunoki, T Suzuki, C Honjo, H Usami and H Kato
   
Reviews Self-assembly on silicon carbide nanomesh templates
Wei Chen and Andrew Thye Shen Wee

Reviews New prospects and frontiers of nanodiamond clusters
Marina Baidakova and Alexander Vul'

Reviews Structure, microstructure and physical properties of ZnO based materials in various forms: bulk, thin film and nano
Shubra Singh, P Thiyagarajan, K Mohan Kant, D Anita, S Thirupathiah, N Rama, Brajesh Tiwari, M Kottaisamy and M S Ramachandra Rao
   
Reviews Current status of AlInN layers lattice-matched to GaN for photonics and electronics
R Butté, J-F Carlin, E Feltin, M Gonschorek, S Nicolay, G Christmann, D Simeonov, A Castiglia, J Dorsaz, H J Buehlmann, S Christopoulos, G Baldassarri Höger von Högersthal, A J D Grundy, M Mosca, C Pinquier, M A Py, F Demangeot, J Frandon, P G Lagoudakis, J J Baumberg and N Grandjean

   
  
[b]SENSORS, DEVICES AND BIOMEDICAL APPLICATIONS[/b]
Reviews SiC sensors: a review
N G Wright and A B Horsfall


Reviews Wide gap semiconductor microwave devices
V V Buniatyan and V M Aroutiounian

Reviews Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications
V Cimalla, J Pezoldt and O Ambacher

Reviews Surface functionalization and biomedical applications based on SiC
R Yakimova, R M Petoral Jr, G R Yazdi, C Vahlberg, A Lloyd Spetz and K Uvdal

Reviews Diamond for bio-sensor applications
Christoph E Nebel, Bohuslav Rezek, Dongchan Shin, Hiroshi Uetsuka and Nianjun Yang

Reviews Diamond as a unique high-tech electronic material: difficulties and prospects
Rafi Kalish

[[i] 本帖最后由 hjlyyc 于 2007-11-06 09:04 编辑 [/i]]

thank you very much!

好东西，非常全面，多谢！

这一期的所有文章现在可以免费下载！

thank you！but 能否直接给出全文呢？/只有第一页呀,不方便下:D

主要是SiC为主，III-V相关的不太多