gutenm 2007-11-30 00:42
请教一个基础问题
我们的一个练习题,希望高手过来讨论一下S:|5MBvR
In his talk ,Richard P.Feynmann described storing bits 3-dimensionally using cubes of 5x5x5= 125 atoms.
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Assume that we built such a structure by MBE or MOCVD, followed by e-beam
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lithography (or x-ray lithography). For convenience, assume that the 125 atom dots are'Mp:J&L3j mF_
Ge, and that the substrate and the matrix surrounding the dots are Si. Assume that
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along the x direction, 5 atoms of Si (lattice constant a= 0.5431 nm) separate the 5
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atoms of Ge (a= 0.5658 nm). Along one cubic axis, the resulting structure will then be:
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(SiSiSiSiSi)(GeGeGeGeGe)(SiSiSiSiSi)(Ge… etc.. ) Neglect any lattice strain effects
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and assume that in each region the atoms take on their bulk lattice constant with noMe)`5~#S&rE6o
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dislocations. a) What is the bit density on the surface (per cm-2) i.e. of one layer? b)
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What is the volume density of bits for multiple layers? c) What area is needed to store t$EW/Z t m{\g-@
one Terabit on one surface layer? d) For a 1 cm2 area, how many bits are stored in 10
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layers?
shengmao 2008-03-01 11:50
看来同行少啊,没有人参与啊