查看完整版本: 离子束加工纳米结构

离子束加工纳米结构

[size=4][color=blue][b]包括纳米粒子和各种表面纳米结构。离子束诱导纳米结构物理化学特性的变化。 [/b][/color][/size]

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"WQP.gA [size=4][b] Nanostructuring by ion beam[/b]
2x+~C)y e-LJ1U"Q Valbusa U.1; Boragno C.; Buatier de Mongeot F.
|A_ mnBr9~(W q Materials Science and Engineering: C, Volume 23, Number 1, 15 January 2003, pp. 201-209(9)
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Abstract:
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l8aT%v"c?oh2IL In metals, the surface curvature dependence of the sputtering yield and the presence of an extra energy barrier whenever diffusing adatoms try to descend step edges, produce a similar surface instability, which builds up regular patterns. By tuning the competition between these two mechanisms, it is possible to create self-organized structures of the size of few nanometers. Height, lateral distance and order of the structures change with the deposition parameters like ion energy, dose, incident angle and substrate temperature. The paper offers an overview of the experiments carried out and foresees possible applications of these results in the area of material science.
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[size=4][b]Secondary ion mass spectrometry and atomic force spectroscopy studies of surface roughening, erosion rate change and depth resolution in Si during 1 keV 60 degrees O-2(+) bombardment with oxygen flooding[/b] }4rG/c"HMl9fg\ar
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Jiang ZX, Alkemade PFA
){nU(NU [b]JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B [/b]16 (4): 1971-1982 JUL-AUG 1998
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Oxygen flooding during secondary ion mass spectrometry (SIMS) depth profiling is often used to achieve very short surface transients. However, for low-energy and obliquely incident O-2(+) primary beams, oxygen flooding can be detrimental. In this work we have measured as a function of depth the erosion rates, surface topographies and depth resolution for B and Ge in Si bombarded by 1 keV 60 degrees O-2(+) with and without oxygen flooding. Using B and Ge deltas we showed that the erosion rate under oxygen flooding was not constant. The effect was most pronounced at intermediate flooding pressures; at saturation pressures, a drop of 25%-30% was found within similar to 25 nm below the surface. Atomic- force microscopy measurements revealed that the erosion rate change was related to the onset of surface roughening. Oxygen flooding influenced the depth resolution in terms of the decay length for B and Ge in different ways. With oxygen flooding, the Ge decay length was larger than without flooding due to oxide-enhanced segregation; while the B decay length was smaller, due to swelling of the sample. In terms of the delta peak width, best depth resolution was always obtained without flooding. This study showed that oxygen flooding impedes accurate ultrashallow SIMS depth profiling. [/size]

[size=4][b]Nanofabrication using neutral atomic beams[/b] tQI,\L
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    J. H. Thywissen, K. S. Johnson, R. Younkin, N. H. Dekker, K. K. Berggren, A. P. Chu, and M. Prentiss
eE)ebLSW     Department of Physics, Harvard University, Cambridge, Massachusetts 02138 ]NKx)wWX7P
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    S. A. Lee EAks#i N1V.E
    Department of Physics, Colorado State University, Fort Collins, Colorado 80523 6R'F8~+{k[}P
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[b]Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures [/b]-- November 1997 -- Volume 15, Issue 6, pp. 2093-2100
~E1z4k$f doi:10.1116/1.589227
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We present a survey of neutral atom lithography. The combination of nm-scale features, large-area parallel deposition, and effective resists demonstrates the promise of atoms as a lithographic element. We demonstrate the transfer of 70-nm-wide features from a neutral atomic beam into a substrate using several resists, including self-assembled monolayers of alkanethiolates on Au and of alkylsiloxanes on SiO2, and "contamination" resists deposited from vapor. Unlike photons and electrons, noble gas atoms in energetic metastable states have an internal state structure that is easily manipulable, introducing the possibility of novel lithographic schemes based on the optical quenching of internal energy.[size]
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