查看完整版本: 聚焦离子束(FIB)加工纳米结构

聚焦离子束(FIB)加工纳米结构

[size=4][color=blue][b]随着FIB(聚焦离子束)与高性能扫描电子显微镜技术的结合，FIB已经成为纳米加工技术的一个重要手段之一。所以希望这个帖子能够提供这个专题方面的较全面的研究消息。包括基础和进展。欢迎大家发帖。[/b][/color][/size]

Introduction Focused Ion Beam

[size=4]he Focused Ion Beam (FIB) system uses a Ga  +  ion beam to raster over the surface of a sample in a similar way as the electron beam in a scanning electron microscope. The generated secondary electrons (or ions) are collected to form an image of the surface of the sample.
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The ion beam allows the milling of small holes in the sample at well localized sites, so that cross-sectional images of the structure can be obtained or that modifications in the structures can be made.
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1LV-[)hy/\1E(G The applications of FIB include :B6K/IC;y9l'Y9W

.a/Q/H4t.Wr6C     * cross-sectional imaging through semiconductor devices (or any layered structure)
]u/{j1t6ZW"n     * modification of the electrical routing on semiconductor devices
&t8g3uY&sPP8q7|     * failure analysisSyF!Vzd
    * preparation for physico-chemical analysish5l#z"jX.dn
    * preparation of specimens for transmission electron microscopy (TEM)
*v4K"lNl)Q:@#w     * micro-machining
k'x$L j!J'G     * mask repair
)j1h,O,}:V a)?-aSX#r h     * non-semiconductor applications [/size]

Focused Ion Beam System

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    In the focused ion beam system (FIB), a highly focused ion beam is aimed at a target area on the sample. As the beam scans the surface of the sample, a highly magnified image is created, allowing the system operator to clearly view the samples microscopic features. The FIB offers the ability to perform nanopatterning and micromachining respectively, and by instructing the machine to add or remove pertinent features, operator can design and prototype a new micro or nanostructure, modify integrated circuits (IC) and cross section specific features to allow failure analysis even in the 3rd dimension (TEM sample preparation). In a maskless process the FIB allows the fabrication of ultrafine structures by direct deposition of metal (tungsten, gold, iron) or insulator schemes (silicondioxide) with a minimum feature size down to 30 nm and a nesting tolerance of 10 nm. Composite materials can be selectively etched in reactive gas atmospheres achieving aspect ratios up to 30 with a minimum feature size below 25 nm. The ion beam itself could be used to perform spatially confined Ga-doping. )o9b#MK-` HAah%j
    The charge neutralization electron flood gun system which guarantees higher beam stability and ESD prevention allows the improvement of high-frequency devices. Additionally we have adapted an electrical testing unit which enables in situ electrical characterisation of a four terminal device parallel to FIB processing.
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.VF_.\VMqvuI     FIB Specification: Sdo/Y:A9? c^ Yb0s

SRj\6yI r,p"J     Micrion 2500 FIB with Ga liquid metal ion source (LMIS) and charge neutralization unit. B(f!Kym.d
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B     Max. sample size:   4" wafer (75 mm) can be loaded
k!V{H+h$U     Magnification:   100x - 250.000x wh]e.\#vbW
    Resolution:    5 nm
S7^lIR!~9v5I     Aceleration voltage:   5 kV - 50 kV 5VBB}gU5p
    Beam diameter:   5 - 1100nm  (FWHM) )x!M)Qj"Cv#x0Fu
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    Beam current:    1 pA - 20 nA
-{g2O:CJ&NH7O4V     Available metal depositions:  W, Au, Fe P&`%mh1rQ V u
    Available insulator depositions: SiO2
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[i]Ion Beam Coloumn Setup: [/i]
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Focus Ion Beam Instruments:一个样本

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二. 功能：
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定點切割(Precisional Cutting)－利用粒子的物理碰撞來達到切割之目的；
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Y.j(Ft%zZ2Y^ 選擇性的材料蒸鍍(Selective Deposition)－以離子束的能量分解有機金屬蒸氣或氣相絕緣材料，在局部區域做導體或非導體的沉積，提供金屬和氧化層的沉積(Metal and TEOS Deposition)，常見的金屬沉積有鉑Platinum，Pt)和鎢(Tungstun，W)二種；!\S:HL0Dk!B
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@BoVc 強化性蝕刻或選擇性蝕刻(Enhanced Etching－Iodine/Selective Etching－XeF2)－輔以腐蝕性氣體，加速切割的效率或作選擇性的材料去除；
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蝕刻終點偵測(End Point Detection)－偵測二次離子的訊號，藉以了解切割或蝕刻的進行狀況。
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zv6Vb (1)聚焦離子光學系統 (Ion Optics System)
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{ {s8\$X (2)監控型掃描電子光學系統 (Monitoring Scanning Electron Optics
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(3)樣品載台系統 (Stage Movement System)
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(4)控制系統軟硬體設備 (Central Control System)
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P#nl!P0X3z@!k (四)IC製程監控－例如：光阻切割；
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(五)穿透式電子顯微鏡試片製作(可提高試片製作成功率與縮短製作時間)。   [/size]

[size=4][i]Focused ion beam (FIB) technology is an attractive tool for fabrication of material with tolerances as fine as ~10nm and the characterization of material with resolutions as fine as 3 nm.[/i]
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R V2rZ+Y There are several principle elements that must work in concert to achieve the spatial control and imaging of a FIB. First, is the highly focused ion beam derived from a liquid metal source usually Ga+. A principle capability of the dual beam FIB is either the spatially deterministic removal or addition of material. These processes are enabled or assisted through the use several gas micro-nozzle injectors. The gas injectors provide the gaseous material for a locally reactive environment, thus assisting in both materials removal, and in materials deposition in a CVD-like ion-mediated process.k/wK"R*c,M"q
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Materials characterization is an essential strength of the FIB platform. Material can be removed or added while observing the evolution of the surface topography features of the specimen with ion beam stimulated secondary electrons. Additionally, a highly focused electron column provides the capabilities for high spatial resolution secondary electron imaging as well as backscattered electron imaging for sub-micron depth characterization and electron backscattered diffraction for micro-texture and grain boundary character determinations. Electron beam stimulated x-ray analysis using a highly collimated energy dispersive spectrometer (EDS) yields elemental information for Z>12 in the work-point area.B~k;?(rt-|;{

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a+WPeB Dual beam focused ion beam system.
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BW4s7Q*Rs&HY4V Micro-machining can be used in a number of distinct applications.
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Micro-engineering—the milling of a material to create an new [engineering] structure.
8nLA(V%O2k)Z This application includes the creation of tools and devices with micro-dimensions for application in prototyping and development. Examples in nano-science and nano-technology are; micro-channels, micro-gratings, micro & nano-apertures, and nano-lithography.
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R5p L;Yo+`D1y Micro-trimming—the finishing of pre-made structures.
K#S F`6p0K3odK Examples in process engineering are; micro-trimming and MEMS modification. Here the application uses the ion beam to conduct the final trimming of the thin-films and for lithography repair to masks; the application uses the ion beam to trim extraneous material from the mask which would negatively influence its optical properties.
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Micro-sectioning—the removal of material from a surface to reveal the underlying structure.
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Micro-biopsy—the removal of a volume of material for further preparation, or analysis, using other instrumentation. The material could be either be a sliver of material suited for TEM or STEM analysis or representative of bulk material.$To"Zq0W!m1c
This technique provides large uniform areas of electron transparent specimens needed for accurate structural analyses.fc!NEm
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\e`_~ Ge When the beam is rastered over a predefined area with a specific ion dose, the material can be sputtered away in sub-micron geometries. This process is also used to remove dielectric films and expose underlying structures. Once the underlying structure(s) are exposed, the beam can also be used to isolate specific micro-structural or engineered features. Re-deposition of sputtered material can cause problems and must be considered carefully when designing milling procedures through functional devices such as multi layer electronics.q!iVT
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Gas-Assisted-Etching
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Vdc Small amounts of a halogen or a halogen containing gas are directed at the sample surface, making it possible to dissociate the adsorbed precursor gas molecules with the energy transferred from the impinging ion beam. The sputtered material reacts with the dissociated gas molecules and is transformed into a volatile product thus minimizing re-deposition. The beam parameters are adjusted so that the predominant mechanism is chemical etching rather than physical sputtering. Increased mill rates, sidewall angles and high aspect ratio milling can be achieved with gas-assisted etching (GAE). Material selectivity is accomplished by using specific gas chemistries for different materials. This allows the inter-level dielectric films to be removed with little or no damage to the underlying circuitry. With the use of an alternate gas chemistry, the GAE process allows metal lines to be removed selectively without damaging the underlying interlevel dielectric.
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Conductors—If the modification requires a metal connection, an organo-metallic gas, W(CO)6 is introduced and adsorbs to the sample surface. The beam parameters are adjusted so that surface atoms acquire energy below the sputtering threshold. The metal-containing gas is dissociated and forms a nonvolatile product. Repeated rastering of the beam in the presence of the gas results in the deposition of a tungsten metal film, which can be used to make connections from one area of the device to another.pP`6W6Mi

$w;rEv6_9mE4| Insulators—If the modification requires rewiring in an area that has circuitry that has been previously exposed, it is necessary to deposit an insulating film prior to depositing the metal for rewiring. By introducing oxygen and a siloxane-type gas to the sample surface and adjusting the beam parameters, it is possible to deposit a silicon dioxide film. This capability enables complex, multilevel circuit modifications.
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The principle technological elements of the multi-beam, versatile FIB are illustrated. A single intersection point for the SEM & FIB Optics, the Gas Injection system, EDS collimation and the eucentric tilt axis of an automated 5 axis stage is the basis for fast and reproducible results. The cartoon at the left indicates the relative specimen to beam geometries employed for machining and analyzing the specimen.[/size]

Focused ion beam

From Wikipedia, the free encyclopedia[size=4]
B4hC8x V`o9|G Focused ion beam, also known as FIB, is a scientific instrument that resembles a scanning electron microscope. However, whereas the SEM uses a focused beam of electrons to image the sample in the chamber, a FIB instead uses a focused beam of gallium ions. Gallium is chosen because it is easy to build a gallium liquid metal ion source (LMIS). In a Gallium LMIS, gallium metal is placed in contact with a tungsten needle and heated. Gallium wets the tungsten, and a huge electric field (greater than 108 volts per centimeter) causes ionization and field emission of the gallium atoms.)X__AxT

+C;}e%B } These ions are then accelerated to an energy of 10-40 keV (kiloelectronvolts), and then focused onto the sample by electrostatic lenses. A modern FIB can deliver tens of nanoamps of current to a sample, or can image the sample with a spot size on the order of a few nanometers.T7_tV-^s
[img]http://upload.wikimedia.org/wikipedia/en/1/14/Fib.jpg[/img]
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Because of the sputtering capability, the FIB is used as a micro-machining tool, to modify or machine materials at the micro- and nanoscale.
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u]Af5J*m3j A FIB can also be used to deposit material. FIB-assisted chemical vapor deposition occurs when a gas, such as tungsten carbonyl (W(CO)6) is introduced to the vacuum chamber and allowed to chemisorb onto the sample. By scanning an area with the beam, the precursor gas will be decomposed into volatile and non-volatile components; the non-volatile component, such as tungsten, remains on the surface as a deposition. This is useful, as the deposited metal can be used as a sacrificial layer, to protect the underlying sample from the destructive sputtering of the beam. Other materials such as platinum can also be deposited.

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FIB is often used in the semiconductor industry to patch or modify an existing semiconductor device. For example, in an integrated circuit, the gallium beam could be used to cut unwanted electrical connections, or to deposit conductive material in order to make a connection.7W,[4K2At4[)o8z9w
[img]http://upload.wikimedia.org/wikipedia/en/5/50/Fib_tem_sample.jpg[/img]
io UL?n}.{3d s The FIB is also commonly used to prepare samples for the transmission electron microscope. The TEM requires very thin samples, typically ~100 nanometers. Other techniques, such as ion milling or electropolishing can be used to prepare such thin samples. However, the nanometer-scale resolution of the FIB allows the exact thin region to be chosen. This is vital, for example, in integrated circuit failure analysis. If a particular transistor out of several million on a chip is bad, the only tool capable of preparing an electron microscope sample of that single transistor is the FIB.
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The drawback to FIB sample preparation is the above-mentioned surface damage and implantation. However, this is usually only noticeable in high-resolution "lattice imaging" TEM. By lightly ion-milling the sample after completing the FIB preparation, much of this damage can be removed./HrN"[~t H:w2]P
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In short, the FIB is a useful and versatile tool in the materials sciences and semiconductor fields.[/size]

FIB加工的几个纳米结构图片

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A.Stanishevsky. Fabrication of submicron structures in CVD diamond by focused ion beam. Journal of Superhard Materials,20, N6 (1998) 4.$Ytz~U~Q$f
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A.Stanishevsky, A.S.Prakash, S.Aggarwal, J.Melngailis, and R.Ramesh. Focused ion-beam patterning of nanoscale ferroelectric capacitors. Proc. of 42nd Int.Conf. Ion, Electron, Photon Beam Technol. and Nanofabrication., May 26-29 (1998), Chicago,Il. J.Vac.Sci.Technol.B, 16 (1998) 3899.
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%fczG.kHPE Focused ion beams (FIBs) are widely used for implantation, sputtering, and deposition at the micro- and nanoscale. FIBs provide unique capabilities for prototyping new micro- and nano-devices, materials modification, basic studies of ion/surface interactions, and much more.  The ion beam scans the surface in a choosen pattern, resulting in material removal.  The above image is of a FIB milled tip in a CVD (Chemical Vapor Deposition) diamond microcrystal. The tip height is ~400 nm, and the radius is ~40 nm.[/size]

Recent developments in Nanofabrication using FIB

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k3bw/ax'r [size=4][b]Recent Developments in Nanofabrication Using Focused
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[b]SMALL [/b]1 (10): 924-939 SEP 2005
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]!~R'x#oQ|'p'f5K Focused ion beam (FIB) technology has become increasingly popular in the
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the FIB technology are examined with emphasis on its ability to fabricate a ^fl%@2Pn
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wide variety of nanostructures. FIB-based nanofabrication involves four
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[3E;V"we Following an introduction of the uniqueness and strength of the technology,
\e)xy-[;M the ion source and systems used for FIB are presented. The principle and6c7l1E Sa&j-@hoK7V
specific techniques underlying each of the four approaches are subsequently#f2g[z+b/j OuLz Y
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technological improvement and future research are recommended.
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[size=4][b]Ordered anodic alumina nanochannels on focused-ion-beam-prepatterned aluminum surfaces[/b]!@\ NKw"a~ i

lj1B"d w.c}:F+w     C. Y. Liu, A. Datta, and Y. L. Wang
4xQ+cLT3c     Institute of Atomic and Molecular Sciences, Academia Sinica, P.O. Box 23-166, Taipei 106, Taiwan, Republic of China
d5l#b G gq sd     Department of Physics, National Taiwan University, Taipei 106, Taiwan, Republic of China 7c8nudE3I._ _}f#mm
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[b]Applied Physics Letters [/b]-- January 1, 2001 -- Volume 78, Issue 1, pp. 120-122 en4v1sJ{
doi:10.1063/1.1335543
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A combined process of electropolishing, focused-ion-beam lithography, and controlled anodization is used to fabricate anodic alumina films with ordered nanochannels. The ion beam is used to create a hexagonally close-packed lattice of concaves on a polished aluminum surface and the concaves act as pinning points for guiding the growth of nanochannels in the following anodization step. By carefully matching the lattice constant (100 nm) with the anodization voltage, ordered nanochannels with aspect ratio of ~100 are fabricated. The effects of the ion dose and its corresponding depth of the concaves on the ordering of the nanochannel array are investigated and a minimum depth of 3 nm is found to be necessary for effective guidance of the growth of ordered nanochannels. [/size]

High-resolution focused ion beams

[size=4]High-resolution focused ion beams
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&]W:t}\'s!px*[     Jon Orloff
||%Q!R%zN A"YK     Department of Electrical Engineering and Applied Physics, Oregon Graduate Institute, Beaverton, Oregon 97006
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Gt0\o8a7j G/E ADQ'R Review of Scientific Instruments -- May 1993 -- Volume 64, Issue 5, pp. 1105-1130
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The technology of high-resolution focused ion beams has advanced dramatically in the past 15 years as focusing systems have evolved from laboratory instruments producing minuscule current densities to high current density tools which have sparked an important new process: direct micromachining at the micrometer level. This development has been due primarily to the exploitation of field emission ion sources and in particular the liquid-metal ion source. Originally developed in the early 1960's as a byproduct of the development of electrostatic rocket engines, the liquid-metal ion source was adapted for focused beam work in the late 1970's, when it was demonstrated that submicrometer focused ion beams could be produced with current densities greater than 1 A cm–2. Ions can be produced with liquid-metal ion sources from elements including Al, As, Au, B, Be, Bi, Cs, Cu, Ga, Ge, Fe, In, Li, P, Pb, Pd, Si, Sn, and Zn. In the past decade, focused ion beam systems with liquid-metal ion sources have had a significant impact on the semiconductor industry as they were applied to new and greatly improved methods of failure analysis, as well as circuit repair and modification, in situ processing, and lithographic mask repair. This article discusses field emission ion sources, high-resolution ion focusing systems, and means for analyzing their performance. A number of technologically interesting and useful applications are also discussed.[/size]

有更简单的方法，今年的nature material有一篇这种文章，另外nanoletter也有一篇休斯顿大学的一个人的文章也是这方面，他们的看起来要简单的多

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今天看到俺单位的FIB已经安装好了，有机会好好学学！:lol

好呀...B%O$C1X6Nc8L4i
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做cross-section TEM sample很好

楼主的帖子好棒，想做可是就是没条件啊:)

:handshake :handshake :handshake :handshake