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Masakazu Aono, Prof. Dr.
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Director General, International Center for Materials Nanoarchitectonics (MANA)wr-Ay.N'iU#{w4HU
National Institute for Materials Science (NIMS)
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Address
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1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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+81-29-860-4180 (Office) ;?.m ?p+e{Y;R
+81-29-860-4825 (Secretary) /Fgk3}U4A]@
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Fax
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E-mail
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NIMS (National Institute for Materials Science)
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Biography |8e{I2F$O V
Masakazu Aono obtained his doctoral degree from the University of Tokyo in 1972, and was subsequently a research staff member of the National Institute for Research in Inorganic Materials (NIRIM) until 1986, during which time he spent two years (1978-1980) as a visiting professor at the University of Wisconsin, USA. He moved to the Institute for Physical and Chemical Research (RIKEN) in 1982 and organized/managed the Surface and Interface Laboratory until 2002 as the chief scientist at the laboratory. From 1996 to 2005, he was concurrently a professor of Atomic Precision Technology at Osaka University. In 2002, he moved to the National Institute for Materials Science (NIMS) as the director-general of the Nanomaterials Laboratory. In 2007, he assumed the director-general of the International Center for Materials Nanoarchitectonics (MANA) organized in NIMS by the sponsorship of the World Premier International Research Center (WPI) Initiative of the Ministry of Education, Culture, Science and Technology of Japan (MEXT).
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His main research interests lie in nanoscale science and technology, surface physics and chemistry, and nanoelectronic materials and devices. He has been the director of several large research projects, such as the Aono Atomcraft Project in the ERATO (JST) Program (1989-1994), the Novel Functionality of Artificial Nanostructures Project in the CREST (JST) Program (1995-2001), the Novel Atomic Switch Project in the SORST (JST) Program (2001-2003), the Nanoscale Quantum Conductor Array Project in the ICORP (JST) Program, and the Application of Atomic Switch to Next-Generation Logic Operation Devices Project in the Key Technology Program (MEXT).
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He has been awarded various prestigious prizes including the Minister of Science and Technology Agency Award (1983), the Norio Kumagi Prize of the Vacuum Science Society of Japan (1983), the Nikkei Publishers' Award for Advanced Technology (1992), the Japan Surface Science Society Prize (2004), and the Minister of Education, Culture, Science and Technology Award (2007). He is also a Fellow of the American Vacuum Society (USA), the Institute of Physics (UK), the Japan Society of Applied Physics and the National Institute for Materials Science (Japan). He has served as the chairperson of several international conferences, such as the Toyota Conf. on Dynamic Phenomena on Surfaces (1986), the Intern. Conf. on Nanoarchitectonics Using Suprainteractions (2000), and the Intern. Symp. on the Functionality of Organized Nanostructures (2004), and as an organizer of more than twenty international conferences such as those on ion beam analysis, atomic collision in solids, structure of surfaces, nanometer-scale science and technology, solid films and surfaces, advanced materials and devices, trends in nanotechnology, and thin films. He has also served on the editorial board of various international journals, such as the Japanese Journal of Applied Physics, Nuclear Instruments and Methods, Journal of Physical Society of Japan, Surface Review and Letters, Probe Microscopy, Nanoscience, Small, and ACS (American Chemical Society) NANO. $V
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Honors
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Minister of Science and Technology Agency Award 1983
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Norio Kumagai Prize of the Vacuum Science Society of Japan 1985 -LuZ8z [
Nikkei Business Publishers' Award for Advanced Technology 1992
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Fellow of the American Vacuum Society 2003 8u+m)fEln
Fellow of the Institute of Physics (UK) 2004
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Surface Science Society of Japan Prize 2004
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Minister of Education, Culture, Science and Technology Award 2007
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Fellow of the Japan Society of Applied Physics 2007
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[u][b]Publications & [/b][/u]6s
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Suppl. 106 (1991) 315. #aC'D[O@7Si
89. Generation of extremely high vacuum (XHV) without baking the vacuum chamber,
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S. Kato, M. Aono, K. Sato, and Y. Baba, t1O9R4ye q5t
Shinku (Vacuum) 34 (1991) 56. (in Japanese)
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88. Outgassing characteristics of electrochemically-polished stainless-steel vacuum chamber, ro|+`A A
S. Watanabe, S. Kato, A. Shiraishi, Y. Niioka, T. Sasamoto, E. Goto, and M. Aono,
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Shinku (Vacuum) 34 (1991) 51. (in Japanese)
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87. Surface structure of InAs(001) treated with (NH4)2Sx solution, lUb[@
M. Katayama, M. Aono, H. Oigawa, Y. Nannichi, H. Sugahara, and M. Oshima, WDql Z+}/N
Jpn. J. Appl. Phys. 30 (1991) L786.
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86. Separation of scattered ions and neutrals in CAICISS with an acceleration tube, g4@)a:W
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I. Kamiya, M. Katayama, E. Nomura, and M. Aono,
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Surf. Sci. 242 (1991) 404. Y[jk(j"Sk
85. Theoretical calculations of the STM images of the Si(111)√3×√3-Ag surface, 2UV$IU1C
S. Watanabe, M. Aono, and M. Tsukada,
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Phys. Rev. B44 (1991) 8330.
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84. Structure analysis of the Si(111)√3×√3-Ag surface, 7y5T{{P| @'yM
M. Katayama, R. S. Williams, M. Kato, E. Nomura, and M. Aono,
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Phys. Rev. Lett. 66 (1991) 2762. Vw7FD{h
83. Structural analysis of the CaF2/Si(111) interface by coaxial impact-collision ion scattering spectroscopy (CAICISS),
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M. Katayama, B. V. King, E. Nomura, and M. Aono, "J!^rB h&f
Vacuum 42 (1991) 321.
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82. Analysis of CaF2-Si(111) using coaxial impact-collision ion scattering spectroscopy, K
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B. V. King, M. Katayama, and M. Aono, 4oF|)g
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Vacuum 41 (1990) 938. L^!K.wTc'@x
81. Achievement of extreme high vacuum of the order of 10-10 Pa without baking test chamber, &y n'\c$Z LE ?
S. Kato, M. Aono, K. Sata, and Y. Baba,
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J. Vac. Sci. Technol. A8 (1990) 2860.
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80. Growth of single crystals of Bi-Sr-Ca-Cu-O,
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K. Shigematsu, H. Takei, I. Higashi, and M. Aono, j9g9h CL2Y#G%FY
J. Crystal Growth 100 (1990) 661.
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79. Ion irradaiation effects in a Bi-Sr-Ca-Cu-O oxide superconductor,
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T. Kobayashi, S. Takekawa, K. Shigematsu, T. Takahashi, M. Iwaki, H. Sakairi, H. Takahara, and M. Aono, t\q p1I&kM
Nucl. Instr. Meth. Phys. Res. B45 (1990) 480. +T"` u LCD A,}
78. Crystallograhpic polarity of ideomorphic faces on a cubic boron nitride single crystal determined by Rutherford backscattering spectroscopy,
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T. Kobayashi, O. Mishima, M. Iwaki, H. Sakairi, and M. Aono, \(z yGY,w8a
Nucl. Instr. Meth. Phys. Res. B45 (1990) 208. #B
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77. Real-time monitoring of molecular-beam-epitaxy processes with coaxial impact-collision ion scattering spectroscopy (CAICISS),
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M. Katayama, E. Nomura, H. Soejima, S. Hayashi, and M. Aono, %{0]o aF!j ]2d%y
Nucl. Instr. Meth. Phys. Res. B45 (1990) 408. hL H9b'`(n;@q
76. Scattering cross sections for ions colliding sequentially with two target atoms,
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R. S. Williams, M. Kato, R. S. Daley, and M. Aono,
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Surf. Sci. 225 (1990) 355.
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75. Recent developments in low-energy ion scattering spectroscopy (ISS) for surface structure analysis, TJ3o Q e2l/L
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M. Aono, M. Katayama, E. Nomura, T. Chasse, D. Choi, and M. Kato, #`1zx wZ8^Lvv{.hX X
Nucl. Instr. Meth. Phys. Res. B37/38 (1989) 264.
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74. Channeling and backscattering of low energy ions,
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M. Kato, M. Katayama, T. Chasse, and M. Aono, C T }EG'X
Nucl. Instr. Meth. Phys. Res. B39 (1989) 30. 7|l1\!R5B x+tB hI
73. Evaluation of structural quality of a silicon carbide (6H-SiC) single crystal grown by a vapor transport method by Rutherford backscattering spectroscopy, p L$P_w c3Q
T. Kobayashi, M. Iwaki, H. Sakairi, and M. Aono, /w8i9o#D yq7g
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J. Appl. Phys. 65 (1989) 1790.
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72. Magnetic shield of high-Tc oxide superconductors at 77 K, mR/R y,~OS"|&B!l
K. Shigematsu, H. Ohta, K. Hoshino, H. Takayama, O. Yagishita, S. Yamazaki, H. Takahara, and M. Aono,
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Jpn. J. Appl. Phys. 28 (1989) L813. @+E2j,qg1jE
71. Preparation and structure of Sr0.60Ca0.40CuO single crystals, +Q Sq-g#[?
K. Shigematsu, I. Higashi, K. Hoshino, H. Takahara, and M. Aono, ,T,M+w c:n
Jpn. J. Appl. Phys. 28 (1989) L1442.
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70. Titanium carbide single-crystal tips for high-resolution scanning tunneling microscopy (STM), )Z4c}}(W7C M$J
M. Yata, M. Ozaki, S. Sakata, T. Yamada, A. Kohno, and M. Aono, 4DE"V7_+@$z
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Jpn. J. Appl. Phys. 28 (1989) L885.
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69. A novel method for real-time structural monitoring of molecular-beam-epitaxy (MBE) processes,
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M. Aono, M. Katayama,
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Proc. Jpn. Acad. 65 (1989) 137. ]C t\FY PN8c
68. Extremely high vacuum (XHV) chamber constructed by electrochemically polished stainless steel, 6mC6A(Nik2j5W3\
A. Shiraishi, Y. Niioka, T. Sasamoto, E. Goto, M. Katayama, and M. Aono, ,`#RGy-A
Shinnku (Vacuum) 31 (1988) 456. (in Japanese)
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67. Structure analysis of oxygen adsorbed TiC(111) by impact collision ion scattering spectroscopy, q Oh_f$s1C
R. Souda, C. Oshima, S. Otani, Y. Ishizawa, and M. Aono,
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Surf. Sci. 199 (1988) 154.
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66. Novel method for surface and interface characterization - coaxial impact collision ion scattering spectroscopy (CAICISS), 6X2k!v4HW7J"q FD_
M. Katayama, E. Nomura, N. Kanekama, H. Soejima, and M. Aono,
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Shinku (Vacuum) 31 (1988) 377. (in Japanese)
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65. New tip material in scanning tunneling microscopy for surface atomic structure observation, (QZB Cd'O.Ah\
M Yata, T. Shiota, M. Ozaki, A. Kono, M. Aono
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Shinku (Vacuum) 31 (1988) 382. (in Japanese) 2v-Dq0Pl Io
64. Interatomic and image potentials in low energy ion scattering at metal surfaces, LQ6Dw'e9JO
M. Kato, S. R. Williams, and M. Aono, PQ8X8Q)D ?
Nucl. Instr. Meth. Phys. Res. B33 (1988) 462. '\!\#a/ZR
63. Coaxial impact collision ion scattering spectroscopy (CAICISS) - A novel method for surface structure analysis,
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M. Katayama, E. Nomura, N. Kanekama, H. Soejima, and M. Aono, zw M Gi-x
Nucl. Instr. Meth. Phys. Res. B33 (1988) 857.
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62. Quasireson ant charge exchange and reionization in low energy He+ scattering from Sn,
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R. Souda, T. Aizawa, C. Oshima, M. Aono, S. Tsuneyuki, and M. Tsukada,
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Surf. Sci. 187 (1987) L592.
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61. Shadowing and focusing effects in the angular distributions of low-energy rare-gas ions scattered from solid surfaces,
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R. Souda, M. Aono, C. Oshima, S. Otani, and Y. Ishizawa,
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Surf. Sci. 179 (1987) 199. 4H2| o5]-`
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60. Inelastic processes in ion scattering spectroscopy of solid surfaces, ~0b-Y{9C z7V ]4}Y
M. Aono and R. Souda,
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Nucl. Instr. Meth. Phys. Res. B27 (1987) 55.
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59. Surface phonons of superconducting materials NbC(100) and TaC(100),
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C. Oshima, R. Souda, M. Aono, S. Otani, and Y. Ishizawa, *Z%Dr/p a@"P0V e
Phys. Rev. Lett. 56 (1986) 240. YM.~LZ,a*};RD
58. Dispersion relation of surface phonons of TaC(100) studieed by high resolution electron energy loss spectroscopy,
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C. Oshima, R. Souda, M. Aono, S. Otani, and Y. Ishizawa, \[l:W u| fg
Solid State Commun. 57 (1986) 283.
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57. Multiple scattering of low-energy rare-gas ions at solid surfaces,
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R. Souda, M. Aono, C. Oshima, S. Otani, and Y. Ishizawa, 0vm&H]:w|
Surf. Sci. 176 (1986) 657.
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56. Dispersion curves of the surface phonons of the TiC(100) surface,
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C. Oshima, R. Souda, M. Aono, S. Otani, and Y. Ishizawa,
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Surf. Sci. 178 (1986) 519.
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55. Trajectory-dependent neutralization probability of low-energy He+ scattered from solid surfaces, 6z D3{ l%W\ C1p n)z
R. Souda, M. Aono, C. Oshima, S. Otani, and Y. Ishizawa, 9EY B4od+ke M4C P
Nucl. Instr. Meth. Phys. Res. B15 (1986) 138. 0tBw*^ t
54. Interactions of low-energy He+, He0, and He* with solid surfaces, 0l4e!Y+X_HCT
R. Souda and M. Aono,
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Nucl. Instr. Meth. Phys. Res. B15 (1986) 114. e0`$k8]|\*W
53. Structure Analysis of Ag overlayers on Si(111) by low energy Li+ ion scattering, `9n L"VT7V[3b
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M. Aono, R. Souda, C. Oshima, and Y. Ishizawa,
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Surf. Sci. 168 (1986) 713. )X
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52. Optimum angle of deflection electrodes of a cylindrical electrostatic analyzer,
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C. Oshima, M. Aono, and Y. Ishizawa,
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Rev. Sci. Instr. 56 (1985) 227. V!a1p JG
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51. Quantitative surface atomic structure analysis by low-energy ion scattering spectroscopy (ISS), ?6E7Ch!}P/BE1v
M. Aono and R. Souda, 2O%_
O*|&K
Jpn. J. Appl. Phys. 24 (1985) 1249. u/j afH;C"j
50. Atomic chemical composition and reactivity of the TiC(111) surface,
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S. Zaima, Y. Shibata, H. Adachi, C. Oshima, S. Otani, M. Aono, and Y. Ishizawa,
/_&d s4X)_ ?0l6e] f B
Surf. Sci. 157 (1985) 380.
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49. Impact collision ion scattering spectroscopy using noble gas and alkali ions for surface structure analysis, -[][Tu
M. Aono, R. Souda, C. Oshima, and Y. Ishizawa, H*hL Kfi
J. Vac. Sci. Technol. A3 (1985) 1514.
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48. Mechanism of electron exchange between low-energy He+ and solid surfaces,
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R. Souda, M. Aono, C. Oshima, S. Otani, and Y. Ishizawa, )w+mw/R.i
Surf. Sci. 150 (1985) L59. "w)Zy4I H M
47. Experimental observation of microscopic optical surface phonons: TaC(100),
A7m4x9Y:RWRw
C. Oshima, R. Souda, M. Aono, S. Otani, and Y. Ishizawa, A
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Phys. Rev. B30 (1984) 5361.
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46. A specialization of low-energy ion scattering spectroscopy and its application to surface studies of TiC,
Y,[)KOu^$L$A
M. Aono,
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J. Vac. Sci. Technol. A2 (1984) 635.
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45. Quantitative surface structure analysis by low-energy ion scattering, P&['d Q;~8^ F
M. Aono,
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Nucl. Instr. Meth. Phys. Res. B2 (1984) 374. "B_ } km7S
44. The hydrogen chemisorption on TiC(111) surface studied by high resolution electron energy loss spectroscopy, 4P5jH(} N&n h-O H|%S
C. Oshima, M. Aono, S. Otani, and Y. Ishizawa, eM ?'e#G
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Solid State Commun. 48 (1983) 911. #CxCg
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43. Stable field electron emission from a tungsten tip under the ultra-high vacuum of 10-10 Pa,
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C. Oshima, R. Souda, M. Aono, and Y. Ishizawa, +yg+|2w&E4@ R f
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Appl. Phys. Lett. 43 (1983) 611. [Z
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42. Low-energy ion scattering from the Si(111) surface: Analysis of the clean 7×7and Te-stabilized "1×1" structures, H!F|&N+Z3hE
M. Aono, R. Souda, C. Oshima, and Y. Ishizawa,
/b5l(H hl K.@Z
Nucl. Instr. Meth. 218 (1983) 241. +s A:B)h3BGwO!H
41. Structure analysis of the Si(111)-7×7surface by low-energy ion scattering, /FG5b'W7N B
M. Aono, R. Souda, C. Oshima, and Y. Ishizawa, mK9B+d3F)}-C E6RM
Phys. Rev. Lett. 51 (1983) 801. 6z2n ^2szR9A$Ow
40. Thermal vibration amplitude of surface atoms measured by specialized low energy ion scattering spectroscopy: TiC(111),
p d R+w3O f G;s
R. Souda, M. Aono, C. Oshima, S. Otani, and Y. Ishizawa,
M@,_ [ Jq&T
Surf. Sci. 128 (1983) L236.
Z|aA/ZIs$O
39. Titanium oxycarbide on TiC(001) surface, L ^:w-@,f@
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C. Oshima, S. Otani, M. Aono, S. Zaima, and Y. Shibata, "rqGS
Ca m"?!}
Jpn. J. Appl. Phys. 22 (1983) 930. 7d*\l:|5\2W
z
38. Angle-resolved photoemission studies of GaAs(100) surfaces grown by molecular-beam epitaxy, ,mO2H'f,vt;E c,r B
T.-C. Chiang, R. Ludeke, M. Aono, G. Landgren, F. J. Himpsel, and D. E. Eastman,
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o8a4C"V"|-b k
Phys. Rev. B27 (1983) 4770.
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37. Direct analysis of the structure, concentration, and chemical activity of surface atomic vacancies by specialized low-energy ion scattering spectroscopy: TiC(001),
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M. Aono, Y. Hou, R. Souda, S. Otani, and Y. Ishizawa, 1h.PO]&n d
Phys. Rev. Lett. 50 (1983) 1293.
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36. Interaction potential between He+ and Ti in a keV range as revealed by a specialized technique in ion scattering spectroscopy, ST
^5@#D
M. Aono, Y. Hou, R. Souda, C. Oshima, S. Otani, Y. Ishizawa, K. Matsuda, and R. Shimizu, #N8OAd;{'b
Jpn. J. Appl. Phys. 21 (1982) L670. (Sf ^2`V1{0K p+h
35. Low-energy ion scattering from the Si(001) surface, /s3E$q {6Ph
M. Aono, Y. Hou, C. Oshima, and Y. Ishizawa,
QE5|4pw h3Yw
Phys. Rev. Lett. 49 (1982) 567.
p"zD7F _2?
34. Oxygen adsorption on the LaB6 (100), (110), and (111) surfaces,
?W pp8}
yF-UD
R. Nishitani, C. Oshima, M. Aono, T. Tanaka, S. Kawai, H. Iwasaki, and S. Nakamura,
Q Wq#W;e_\
Surf. Sci. 115 (1982) 48.
:p_/P$m.K N+rc6H;w
33. New method for quantitative surface structure analysis: Low energy impact collision ion scattering spectroscopy (ICISS), 6H^ BXd l
M. Aono, C. Oshima, S. Zaima, S. Otani, and Y. Ishizawa,
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Hyomen-Kagaku (Surface Science) 2 (1981) 204. (in Japanese) $j3r } e&K#l
32. Anomalous two-electron Auger resonance in thorium near the 5d(O5) photothreshold, !ct7NM9_*TP
M. Aono, T.-C. Chiang, J. H. Weaver, and D. E. Eastman, &`E$UWGnz8ZR4\1h
Solid State Commun. 39 (1981) 1057.
B.S3V8VN:` r
31. Delayed onset of 4d photoemission relative to the giant 4d photoabsorption of La, (Ue(`p;T%{Y
M. Aono, T.-C. Chiang, F. J. Himpsel, and D. E. Eastman,
Nuo;E
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Solid State Commun. 37 (1981) 471. 9qq8C7MBd,C
30. Experimental band structure E(k) of V3Si by angle-resolved photoemission, (gT V"cAG_
M. Aono, F. J. Himpsel, and D. E. Eastman, Yn
o`:fi
P!\
Solid State Commun. 39 (1981) 225. vf'Ww!J-jJ/k
29. Quantitative surface atomic geometry and two-dimensional surface electron distribution analysis by a new technique in low energy ion scattering,
8aZ7U FK6T
M. Aono, C. Oshima, S. Zaima, S. Otani, and Y. Ishizawa,
4OP N)} VUD$ka
Jpn. J. Appl. Phys. 20 (1981) L829. _%m/S`fQy
28. The surface properties of TiC(001) and TiC(111) surfaces,
a|5C8e!_ YJ {%s
C. Oshima, M. Aono, S. Zaima, Y. Shibata, and S. Kawai, |b"m2QB4N
J. Less Common Metals 82 (1981) 69.
?,g:C}'K B(O6H i
27. Clean TiC(001) surface and oxygen chemisorption studied by work-function measurements, angle-resolved X-ray photoelectron spectroscopy, ultra-violet photoelectron spectroscopy, and ion scattering spectroscopy,
c F5h1uI
C. Oshima, M. Aono, T. Tanaka, S. Kawai, S. Zaima, and Y. Shibata, )n
lAu+H6i-LA0x!^l
Surf. Sci. 102 (1981) 312. :dR6`^6J Ka
26. A study of Shottky barrier formation for Ga/Si(111)-(2×1) interfaces,
h;KtE Va x
J. F. Freeouf, M. Aono, F. J. Himpsel, and D. E. Eastman,
:m O*HS.? j
J. Vac. Sci. Technol. 19 (1981) 681.
i_/Y,L}%P+Ki2Jv
25. Obsevation of the transition from uncollapsed to collapsed excited f- wave functions in I-, Xe, and Cs+ via the giant postcollision-interaction Auger effect,
YsK!m:[]
T.-C. Chiang, D. E. Eastman, F. J. Himpsel, G. Kaindl, and M. Aono,
^:~ V!_g
Phys. Rev. Lett. 45 (1980) 1846. %f0X2C I5j
24. Direct recombination and Auger deexcitation channels of La 4d_4f resonant excitations in LaB6,
5p!K)n2} A J9y DmW
M. Aono, T.-C. Chiang, J. A. Knapp, T. Tanaka, and D. E. Eastman, D/|8d
F)]~l-uF
Phys. Rev. B21 (1980) 2661.
6P'D R0E6}G
23. Angle-resolved photoemission, valence-band dispersions E(k), and electron and hole lifetimes for GaAs, IH {q f0nG y1X/[
T.-C. Chiang, J. A. Knapp, M. Aono, and D. E. Eastman,
p_3}&T S~
Phys. Rev. B21 (1980) 3513.
b%R.}8hU m
22. Surface states on the LaB6 (100), (110), and (111) clean surfaces studied by angle-resolved UPS,
h#W7E rY
R. Nishitani, M. Aono, T. Tanaka, S. Kawai, H. Iwasaki, C. Oshima, and S. Nakamura, Be!B ];?Y9{0c
Surf. Sci. 95 (1980) 341.
L z Ktcc
21. Surface structures and work functions of the LaB6 (100), (110), and (111) clean surfaces, S3Kn*P*~%KZ#k'e5~
R. Nishitani, M. Aono, T. Tanaka, C. Oshima, S. Kawai, H. Iwasaki, and S. Nakamura,
Q/A`s:C;??-[
Surf.Sci. 93 (1980) 535. ;Ug7_.Y+c1M
20. Oxygen adsorption on the LaB6(100) surface studied by UPS and LEED,
`.w|5M5lu r
R. Nishitani, M. Aono, T. Tanaka, S. Kawai, H. Iwasaki, and S. Nakamura, z:Q*J6`YC9DLS
Surf. Sci. 92 (1980) 191.
Q t5eCm#D A+Y M[W j X
19. Low work function and surface structure of the LaB6(210) surface studied by angle-resolved XPS, UPS, and LEED, B3T h O$v
|"z
C. Oshima, R. Nishitani, M. Aono, T. Tanaka, and S. Kawai,
'YI\s_
J. Appl. Phys. 51 (1980) 997.
3qyf:Po,a0@ r
18. Thermionic emission from single-crystal LaB6 tips with [100], [110], [111], and [210] orientations, 1a Kv
t0^
h,q n
C. Oshima, M. Aono, T. Tanaka, S. Kawai, R. Shimizu, and H. Hagiwara,
2Dk8V,z|4U
@~
J. Appl. Phys. 51 (1980) 1201. nwIM-T ~
17. Angle-resolved photoemission and valence band dispersions E(k) for GaAs: Direct vs. indirect models,
.THt$AL*e(p;]
T.-C. Chiang, J. A. Knapp, D. E. Eastman, and M. Aono, Y'a-G3^6A
yt cD_
Solid State Commun. 31 (1979) 917. -n |y4LaZ
16. Experimental band dispersions E(k) along three main symmetry lines of LaB6 using angle-resolved photoemission from one crystal surface, %d$a.|mod;L,z Cb6v8o
M. Aono, T.-C. Chiang, J. A. Knapp, T. Tanaka, and D. E. Eastman,
/B
P&zA|4x#@"g/R$m
Solid State Commun. 32 (1979) 271. qT8?1h)? @
15. Intensity variations of angle-resolved photoemission spectra of 2H-NbSe2,
3S0|y!k5T3T$F3I i
F. Minami, M. Sekita, M. Aono, and N. Tsuda, RR8fI\ dy
Solid State Commun. 30 (1979) 731.
y,d#r4x ]9Z
14. Angle-resolved photoemission spectra of 2H-NbSe2,
Le#sd-` L[;_9o
F. Minami, M. Sekita, M. Aono, and N. Tsuda,
vZ x UW$x q
Solid State Commun. 29 (1979) 459.
$Tmc$?R~+r2s
Fd
13. 11B nuclear quadrupole interaction in metal hexaborides (MB6), Kz4lB*Q~/i
M. Aono and S. Kawai, %zO
z Z2E;nVLo
J. Phys. Chem. Solids 40 (1979) 797. 5| m mE;Q;kki }
12. Small changes in work function of the TiC(001) surface with chemisorption of O2 and H2O, !H5[%f(tjx$f S
C. Oshima, R. Nishitani, T. Tanaka, M. Aono, F. Yajima, and S. Kawai, j qGTK v0w
Appl. Phys. Lett. 35 (1979) 822. C-J&oYQ,Ek
11. LaB6 and SmB6 (001) surfaces studied by angle-resolved XPS, LEED, and ISS,
bL,X aS/~1e&MNu
M. Aono, R. Nishitani, C. Oshima, T. Tanaka, E. Bannai, and S. Kawai,
#MJB^5|d
Surf. Sci. 86 (1979) 631. xT)i)sU$o;j
10. Direct Observation of the LaB6(001) surface at high temperatures by XPS, UPS, LEED, AES, and work-function measurements,
/NhZ9zA%f
M. Aono, R. Nishitani, C. Oshima, T. Tanaka, E. Bannai, and S. Kawai,
s0It'Cp({:[H
\
J. Appl. Phys. 50 (1979) 4802.
9`&Cegp^1F
9. Azimuthal anisotropy in low energy ion scattering from SmB6(001),
nm
G3QjE s4Yf
M. Aono, R. Nishitani, T. Tanaka, E. Bannai, and S. Kawai,
^0K`2AGu
lTP
Solid State Commun. 28 (1978) 409.
*t$Wu#z8zaq9vj
8. X-ray spectroscopic studies of SmB6, !f8F y.z3x
M. Okusawa, Y. Iwasaki, K. Tsutsumi, M. Aono, and S. Kawai, %SJq'aY
Jpn. J. Appl. Phys. 17, Suppl. 17-2 (1978) 161. @w
M|'P)A
7. Structure of the LaB6(001) surface studied by angle-resolved XPS and LEED,
Up4f"E6Hz^
M. Aono, C. Oshima, T. Tanaka, E. Bannai, and S. Kawai, #T5j.v ~QT*VO
J. Appl. Phys. 49 (1978) 2761.
@2~+Mmy,Z'oec
6. Structure and initial oxidation of the LaB6(001) surface, +U
V:t
aU$AM
M. Aono, T. Tanaka, E. Bannai, and S. Kawai, fuH$RiI@,N
Appl. Phys. Lett. 31 (1977) 323.
.fU p/|jE
5. Surface states of LaB6(001) as revealed by angular resolved ultraviolet photoelectron spectroscopy,
D0Vs
RkF
M. Aono, T. Tanaka, E. Bannai, C. Oshima, and S. Kawai,
/F&_A4{&y.QC
Phys. Rev. B16 (1977) 3489.
!MU }J}d-HC7hG
4. Raman spectra of metallic and semiconducting metal hexaborides (MB6),
YF;MWy2V
M. Ishii, M. Aono, S. Muranaka, and S. Kawai,
*N@ e)Ky Z*|/|+C+v
Solid State Commun. 20 (1976) 437.
\#V&]m1P
3. The valence band structure of metal hexaborides: An ESCA study of CaB6 and YB6,
r+s*c zi
M. Aono, S. Kawai, S. Kono, M. Okusawa, T. Sagawa, and Y. Takehana, (VE'U9mxp&Zb
J. Phys. Chem. Solids 37 (1976) 215.
+l x9^O9i
2. ESCA study of electronic structure of SmB6,
"W e!HwI e2Q%O
M. Aono, S. Kawai, S. Kono, M. Okusawa, T. Sagawa, and Y. Takehana, /K/^O`"O%n*I)D
Solid State Commun. 16 (1974) 13. d+wl&Q0YS O$S+w&R
1. Electrical conductivity of slightly reduced rutile between 2°and 370°K, K/|c8NeN} }@
R. R. Hasiguti, E. Yagi, and M. Aono, -Q!F F F&uG v
Radiat. Eff. 4 (1970) 137.
V)Y
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M"^5r%D)}~
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[b][u]Presentations[/u][/b]
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Invited talks
:V/ab w,}'tS
Partial List (International conferences)
1|Nm5g!_(b9CP
142. Control of Nanochemical Reactions,
*^9w5D#mzS
M. Aono, *g yG;ZTQ
International 21st Century COE Symposium on Atomistic Fabrication Technology 2007 (Osaka, Japan, 2007).
2o[/ZukG/e
141. Electrical conductivity of low-dimensional nanostructures, 'P*pi"G"V?*Q
M. Aono, T. Nakayama, Y. Shingaya, O. Kubo and M. Nakaya,
4K xEa6dL wD
212 ECS Meeting (Washington, DC, U. S. A., Oct., 2007).
Np8yX0e
140. Nanoscale Ionic and Molecular Dynamics – New Horizons of Nanotechnology,
;^ }?;as-U o
M. Aono, 8G%^*F(~Y g8I3K|
The 17th Iketani Conference; Doyama Symposium (Tokyo, Sept., 2007). ^ f.wb^/f GR4O
139. Scanning Tunneling Microscopy and Photons, 2x+tl`-w4T"Y^
M. Aono,
b nT|T
International Conference on Materials for Advanced Technologies 2007 (Singapore, July, 2007).
X%^1T1w`*Rs Tf
138. Reversibly controlling nanoscale chemical and physical processes by applied voltage,
.O
sH;q|5]*b"@6qQ
M. Aono, I t,^W+X[G;W-Y8I
Swiss Nanoconvension 2007 (Berne, Swiss, June, 2007). d"]#f6g,a~-T
137. Controlling Chemical and Physical Changes Reversibly at the Nanoscale,
s&w:T+z3M7W
M. Aono, e C M f7]"e
International Nanoscience Symposium (Hamburg, Germany, May-June, 2007). "r5oZp+I
136. Multiprobe Scanning Tunneling Microscopy of the Electrical Conductivity of Low-dimensional Nanostructures, y7z z7`N!yA/?
M. Aono, 0qxg8l t yke)e
PCSI-34 (Salt Lake City, U. S. A., Jan., 2007). &NB(qxx[J
135. Nanoscale Electrical Conduction,
o \qM3Oa6Ov;h
M. Aono, G/R e!E4U?t Hj
ICSPM14 (Atagawa, Japan, Dec., 2006).
%`r x#rS@&ZvC3m,[q M
134. Electrical Conduction in Low-dimensional Nanostructures, x \1l]2N`9U
M. Aono,
d:pX@1M,R'o
Japan-Australia NanomaterialsWorkshop (Canberra, Australia, Nov., 2006)
fF]!oS,Mc-\ u'a
133. Electrical Conduction in Low-dimentional Nanostructures for Novel Nanoelectronic Devices, w0I O nG.R6F
M. Aono, Japan-Germany Joint Workshop 2006 (Tokyo, Oct., 2006). !\I0kN7k4F0IS
132. Novel Atomic and Molecular Switches,
#BwcTT't
G0~
M. Aono, T. Nakayama, M. Nakaya, T. Hasegawa, K. Terabe, T. Sakamoto, Y. Kuwahara, M. Akai, w+Pt9O$J!p6g
MNC2006 (Kamakura, Japan, Oct., 2006).
ZU }$b`[8{f
131. Exoring Novel Capabilities of the Scanning Tunneling Microscope,
(Q4S H-sfyc!E.i
M. Aono, Owxq0{!vu,X/t
LEEM&PEEM-V (Himeji, Japan, Oct., 2006).
b,] `'{Znb ]
130. Novel Atomic and Molecular Devices, /T\s0j i K
M. Aono, T. Nakayama, M. Nakaya, T. Hasegawa, K. Terabe, T. Sakamoto, Y. Kuwahara, M. Akai, P,aSO e J/\
2nd Nanoelectronic days (Aachen, Oct., 2006). VR.kE@ m T_j
129. Eectrical Conduction in Low Dimensional Nanostructures, #g9bd Pp
M. Aono, T. Nakayama, Y. Shingaya, O. Kubo, M. Nakaya
&ZuyN D*hy5g
TNT2006 (Grenoble, France, Sept. 2006).
t1c5Z5QQ0p
128. Electrical Conduction in Low Dimensional Nanostructures measured by Multiprobe Scanning Tunneling Microscopes,
8i*`*RQar jU
M. Aono,
d7Ll\7H} y%sM
IWQ3MS (Hefei, China, Aug., 2006). uU/P4E;QSS5b
g8O
127. Diffusive, Ballistic and Polaronic Electrical Conduction in One-dimensional Nanowires,
UEcEz B
M. Aono,
8eGW v G [
NANO2006 (Bangalore, India, Aug., 2006). "w9l"r6c:s/p,ql
126. Multiprobe Scanning Tunneling Microscopes and Related Methods - Development, Application and Prospects , v] I'Q N#^
M. Aono,
t8v*KiO
N6k-I d5r
ICN+T 2006 (Basel, Switzerland, July-Aug, 2006).
v,m(\sw:f
125. Electrical Conductivity of Organic and Inorganic Nanowires Measured by Multi-probe Scanning Tunneling Microscopes,
1@Z/B%pL
eK)G
A
M. Aono, 'l
_3lo3JG9f7B!sZ%`
APS March Meeting 2006 (Baltimore, U.S.A., March 2006). _@0V;E%l
nzj)C[
124. Atomic and Molecular Switches for Nanolectronics, rJ#Bg6e7d x0l
M. Aono, JY&NhTUo8V0F
The Sixth France-Japan Workshop on Nanomaterials (Sapporo, Japan, March 2006). -iq+\*O}\#r ^
123. Ballistic, Diffusive, and Polaronic Electrical Conduction in Nanowires - Observation by Multiprobe Scanning Tunneling Microscopes -,
!vzJ S a4Sn
M. Aono,
k,`-z:} A O%v0^lF
1st Asian Pacific Symposium on Nanoscicen and Frontier Materials (Tokyo, Japan, Feb., 2006).
M J3F
El-o
122. Ballistic, diffusive, and polaronic electrical conduction in organic and inorganic nanowires obsrved by multiple-probe scanning tunneling microscopes,
h4mQ9R&~ X
M. Aono, Jeg)@VS5v(o}9Q
ALC'05 (Big Island, Hawaii, U.S.A., Dec. 2005) ;azZ `QQN@
121. Novel atomic and molecular switches,
#?H-f/K9R
M. Aono, ,d;o-aA9UP j5?%PB D
SIMD5-NPMS7 (Maui, Hawaii, U.S.A., Dec. 2005).
Nt@m+f,S \!N%q#uo
120. Control of local polymerization and depolymerization using a scanning probe, y I${8E$@ w)M9y
M. Aono, y
O#K4oC g,z}
ISSS-4 (Omiya, Japan, Nov., 2005). b2J!A e,m
lE`v&S
119. Invention, development and application of the atomic switch, 9|
A
c"]G oU%^CA
M. Aono, ?.O5F8\S,v
TNT2005 (Oviedo, Spain, Aug., 2005). 8D7tKk0P
~:Et
118. Measuring at the nanoscale _ development and application of multiple-Probe STMs, Z1L&Jj4]{ x7D:eL
M. Aono, n h
R S2q9r
Seeing at the Nanoscale III (Santabarbara, California, U.S.A., Aug., 2005). -i4~;z;Gh5Q
117. Reversible control of nanoscale chemical and physical processes by the polarity of applied voltage, ;I n P|`{+e(S
M. Aono,
#K&q5r(o/c5^ e
ACSIN-8/ICTF-13 (Stockholm, Sweden, June 2005).
}:j;Bo ~7^2U)ra
116. Novel Methods of Structure Fabrication and Property Measurement on the Nanoscale, i&v
kGT m#i0w J!V
M. Aono,
]c Z e6d#B F
NANOMAT-Birkeland Conference 2005 (Trondheim, Norway, June 2005) |6I(g\\9h F
zJBZ0w
115. Development and Application of Atomic Switch, #r|X3Q s
M. Aono, 5Y2b w D|l;u6qey
HP Lalbs/QSR Workshop (Palo Alto, U.S.A., March 2005).
v.]%YP _0r
114. Field and Current Induced Chemical Reactions on the Nanoscale,
S |7d3Y?-ZN\
l
M. Aono, Uh\!@
x%U
ICYC Workshop (Mishima, Japan, Jan. 2005). D}L4K*U|)^1C
113. Electrical conduction in inorganic and organic nanostructures,
G4c+lL't
zo5i/f
M. Aono,
v K,mV-j8@y
nanoPHYS’05 (Tokyo, Japan, Jan. 2005)
] cqA"z5K [} zv
112. Fabrication, characterization and organization of nanostructures,
~7vvIxW
M. Aono, {i6cW&Qf%D&^
1st International Symposium on the Functionality of Organized Nanostructures (FON’04) (Tsukuba, Japan, Dec. 2004). rh"zY c&p/H$G m
111. Reversible control of polymerization and depolymerization on the nanoscale, -cZ9OB U%V \!`Y
M. Aono,
%XU ?l
K"L
5th Japan-France Workshop on Nanomaterials (Bordeaux, France, Oct. 2004). OLB
L*dy
110. Controlling local polymerization and depolymerization reversibly using a scanning probe,
@'jw GT
M. Aono q@R%M;Y&d+^
TNT2004 (Segovia, Spain, Sept. 2004).
V Cf!G%we:|:I&X5v
109. Innovation of STM for nanotechnology research,
1e k/O7L:I f
M. Aono,
\v2o#kh4rp_7A
}
The Japan-Korea Nano Analytical Technology Symposium (Makuhari, Japan, Sep. 2004). X5n(E*hC ['g4V
108. Polymerization and depolymerization controlled by a scanning tunneling microscope tip, 1t6V#^ y/]
M. Aono,
M+F9D([$zW
The 6th Taipei Symposium on Surfaces, Thin Films, and Nano Science (Taipei, Taiwan, Aug. 2004).
&n^9[ X1} Zc \w
107. Controlling local polymerization and depolymerization reversibly using a scanning probe tip,
.N tN:u2n%MX {J
M. Aono,
2bPy.i]-GV
Ｓwiss-Japanese Nanoscience Workshop (Nara, Japan, June 2004). C7TB nm\)h
106. Sciengineering" on the nanoscale,
5A BSC'~0vlR
M. Aono, M?,X vI b
3rd Int. Conf. Computational Modeling and Simulartion of Materials (Sicily, Italy, June 2004). O T To-x9Tc&n
105. Controlling local polymerization and depolymerization reversibly using a scanning probe, Z L\2k%K `^$n D'l j
M. Aono,
Nbc i'sUe&J LI
Beijing-TEDA 2004 Scanning Probe Microscopy, Sensors and Nanotructures (Beijing, China, May 2004). 7m{ Fz}'B k
104. Electrical conduction in nanostuctures, ,Dd K6r?9w!I%A)LX
M. Aono, xuk E9O4WQ#{
Japan-US research collaboration for Synchrotron radiation nanomaterials science (Tokyo, Japan, March 2004).
3f;zhvz8w
d
103. Electrical conduction in organic and inorganic nanostructures,
9_
s[$]v5W j6MZ
\ U
M. Aono,
n3grehn T
APF-9 (Tsukuba, Japan, March 2004). !?
R$b+L#w
U0C i
102. Dynamic process of molecular wiring and atomic switching, E(M+? K~Qu
M. Aono,
{ tIb(s$R6IJ
NNQP2003 (Tokyo, Japan, Dec. 2003). V4^ Z7VlD%[(T
101. Dynamic processes of atomic switching and nanoscale wiring,
4fM2|-xnn)`j
n
M. Aono, g2^3b.M'n$~
FIMS/ITSNs 2003 (Joint Intern. Symp)(Tsukuba, Japan, Nov. 2003). 'wWt*t6l\u:\
100. Controlling atomic and molecular dynamic processes on the nanometer scale,
e#BT.X8Y*Rt| `
M. Aono, n y@$_ ~
p~7qW
ACSIN-7 (Nara, Japan, Nov. 2003). hGC%pl,NG
nq:O
Z
99. Dynamic processes of nanoscale wiring and atomic switching,
^.@V f\ l o J
M. Aono,
"_(HT-c
Y
Intern. Symp. On Functional Semiconductor Nanosystems (FSNS2003) (Atsugi, Japan, Nov. 2003) 0h%LC;D!`q(M to
98. Exploring novel abilities of scanning tunneling microscopy, X ^7YO!]4s HM{
M. Aono, 'V~B
Hc*\@
1st Intern. Symp. on Active Nano-characterization and Technology (Tsukuba, Japan, Nov. 2003). !]w-P/{eq LyB
97. Dynamic processes on the nanoscale, ] ^4{,m+ao1Nw
M. Aono,
*hq~P
`
Mext Workshop "International Workshop on Smart Interconnects" (Atami, Japan, Nov. 2003).
J S5m$AFUWw"s
96. Controlling dynamic processes on the nanoscale,
#I?pj z
M. Aono, ~9o%i6o\!b3? A['D
第８回IUMRS先進材料国際会議 (IUMRS-ICAM 2003) (Yokohama, Japan, Oct. 2003).
M&PS@7{ B9m$s^
95. Control of atomic and molecular dynamic processes on the nanoscale, 5I xs v
F([)y-m
M. Aono, "{^"ai4o T?
4th International Symposium on Atomic Level Characterizations for New Materials and Devices (ALC’03) (Kauai, Hawaii, U. S. A., Oct. 2003). ]9Gyr)T9x
94. Control of atomic and molecular dynamic processes on the nanoscale,
h!s6BI8l(z j
M. Aono, x OQ:|:`:g5S
TNT2003 Conference (Salamanca , Spain, Sept. 2003).
8c| a Qv| O!E x
93. Novel methods of structure fabrication and property measurement on the nanoscale, /s$O*J-L%\
do:s&dD-_
M. Aono, (jA ?1Nc
TOP NANO(Internarional Nano Conference 2003) (St. Gallen , Switzerland, Sept. 2003). V\4z0J"k&S9S%I2c L
92. NanoElectronics in NIMS,
s+|r2Be C8I
M. Aono,
X|?
z^@,W K;Z
Asia Pacific NanoElectronics Exhibition and Workshop 2003 (APNEX2003) (Taipei, Taiwan, April 2003). }!E }_$h"w,X
91. Multiple probe scanning tunneling microscopes for nanoscale conductivity Measurement,
0}!R
t5sd D(t'r[
M. Aono, T. Nakayama, T. Hasegawa, Y. Shingaya, Y. Okawa, Y. Kuwahara, M. Akai, and K. Takami, "T @mN-d"d|
Japan-US Workshop (Ithaca, New York, U.S.A, Jan. 2003). V
ik2RX
x]K1F \$i
90. Electrical conduction in low dimentional nanotructures,
/g\n/Vm4N!h!o.L ?
M. Aono,
~ o!RqN'c%G
Asian Symposium on Nanotechnology and Nanoscience (Asia NANO 2002) (Tokyo, Japan, Nov. 2002).
r^HV4w2G t2F
89. Towards novel SPMs with multiple probes,
N(cN@ m8\B$X5Mm/b
M. Aono, 7t beg%{@$t
{
The 10th International Colloquium on Scanning Probe Microscopy (Waikiki, Hawaii, U.S.A., Oct. 2002)
b:if)KE
E Qf
88. Exploring novel abilities of the STM, 7O:f
S*D Qj
M. Aono,
.Z3Ag{w4t*m J;_ ?(^
ナノインテリジェント材料／システム／国際シンポジウム（Tokyo, Japan, Oct. 2002） O8y"`\ A z9]8m
87. Exploring novel abilities of the STM, +n3T1?%Cc&j%\9S)l1V
M.Aono, ~n G#J^4{0z@$b a
TNT 2002 Conference (Santiago de Compostela, Spain, Sept. 2002) Fv
L fI'@E]7^
86. Electrical Conduction in Nanoscale Structures,
C J E,gwt m
M. Aono, T. Nakayama, T. Hasegawa, H. Tanaka, Y. Shingaya, Y. Okawa, Y. Kuwahara, M. Akai, and K. Terabe, }-E p{m j
Asia SPM-4 Taipei Symposium on Nanotechnology (Taipei, Taiwan, Aug. 2002). d_
B7E7o a
85. Polarized light emission from surface states and nanostructures, X] O)I(V
M. Aono,
QlCg xt;z p-oc
7th International Conference on Nanometer-scale Science and Technology, 21st European Conference on Surface Science (NANO-7/ECOSS-21) (Malmo, Sweden, June 2002).
\+r3[ d,_
84. Electrical conduction in low dimensional nanostructures,
D'[yVSo,G$L B
M.. Aono, O)~ pOwvI*K C;L
2nd IWSITFP (Beijing, China, May 2002). /nd t4W%kQ`{
83. Electrical conduction in low-dimensional nanostructures,
o4wB:~t x
M. Aono,
W F
p,A0TDFo'~
QTDM&QFS’2002, The Multilateral Symposium between the Korean Academy of Science and Technology (KAIST) and the Foreign Academies (Seoul, Korea, May 2002).
W Z @lL H5e
82. Dynamic nanoarchitectonics of low-dimensional molecular and atomic nanostructures,
Oac+wD6]
M. Aono, 4}#y;Q7irfJ
The Second International Symposium on Nanoarchitectonics Using Supra- interactions (Los Angels, U. S. A., March 2002).
%b!Z9~2fg1R e N(L
81. Electron transport in nanoscale films, wires and point contacts, ] UQt3P_(?O"RrvA
M. Aono, T. Nakayama, T. Hasegawa, H. Tanaka, Y. Shingaya, Y. Okawa, Y. Kuwahara, and M. Akai,
%E
k9k;N&c?Z
Annual APS March Meeting 2002 (Indianapolis, U.S. A., March 2002)
2h7F? Yj*e
80. Electron transport in nanoscale films, wires and point contacts, A%DZ.}E+d-l
M. Aono, T. Nakayama, T. Hasegawa, H. Tanaka, Y. Shingaya, Y. Okawa, Y. Kuwahara, and M. Akai,
SAU _ P Y
A
European workshop Materials for Advanced Metallization (Vaals, The Netherlands, March 2002). 7|(S Q3D+r#X
79. Nanoelectronics in Japan : Efforts to understand electrical conduction in low-dimensional nanostructures,
ZQ-W2L!X{
M. Aono, b{)ZYB8E
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The Asia Pacific Nanotechnology Forum Inaugural Conference (Tsukuba, Feb. 2002).
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78. Electron transport in nanoscale films, wires and point contacts,
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M. Aono, T. Nakayama, T. Hasegawa, H. Tanaka, Y. Shingaya, Y. Okawa, Y. Kuwahara, and M. Akai,
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Symposium on Surface Physics 2002 (Furano, Jan. 2002).
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77. Direct measurement of electrical conductivity of ananoscale films and wires using multiple-probe STMs, Ww _5B EZX}
M. Aono, T. Nakayama, T. Hasegawa, H. Tanaka, Y. Shingaya, Y. Okawa, Y. Kuwahara,
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AIST International Symposium on Nanotechnology - Potential Industrial Technology in 21st Century _ (Tokyo, Nov. 2001).
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76. Electrical conduction in nanoscale films, wires and point contacts,
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M. Aono, T. Nakayama, T. Hasegawa. H. Tanaka, Y. Shingaya, Y. Okawa, Y. Kuwahara, and M. Akai,
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Japanese-Swiss Workshop _ Nanoscience II: From microfabrication to single molecular recognition (Pontresina, Switzerland, Sept. 2001). W0t XqX!~
75. Electrical conduction of nanowires and point contacts
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M. Aono, T. Nakayama, T. Hasegawa, Y. Okawa, and Y. Kuwahara, \:m Q\G J| V
TNT2001 Conference (Segovia, Spain, Sept. 2001).
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74. Electrical conduction in nanoscale films, wires, and point contacts,
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M. Aono,
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11th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques (Vancouver, Canada, July 2001). il;ZGfVB$q)B2TN Z4f
73. Eectrical conduction of ananowire and point contacts, W/~8G8{"X%[(L!]GBV
M. Aono, T. Nakayama, T. Hasegawa. Y. Okawa, and Y. Kuwahara,
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First International Workshop on Quantum Nanoplanar Nanostructures & Nanelectronics ’01 (Tsukuba, July, 2001). I%`,\l|B
72. A novel atomic switch: Quantum-conductance atomic switch (QCAS),
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M. Aono, T. Nakayama, and T. Hasegawa,
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International Conference “Nano Science and Technology in the 21st Century”, (Sendai, June, 2001). -d3N-Eg:s_)o [$o[
71. Chain-polymerization nanoscale wiring and solid-electrochemical quantum- point-contact switching, G-iw+O#xn
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M. Aono,
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Gorden Conference on Chemical Reaction at Surface (Ventura, California, USA, Feb. 2001). e+c(m5q I ~p5G
70. Nanoscale fabrication and quantized conductivity,
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M. Aono,
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Symposium on Surface Science 2001(3S '01) (Furano, Japan, Jan. 2001). ;V T_/j sG/\7|J
69. Local and non-local photo- and electro-chemical reactions, a4Pa6h9p6n;A
M. Aono,
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First International Symposium on Nanoarchitectonics Using Suprainteractions (NASI1) (Tsukuba, Japan, Nov. 2000). d!F?R;P'^-].Fp2_)e2} F
68. Exploring new methods for nanofabrication and nanocharacterization,
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M. Aono,
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Strategies in Nanotechnology Japanese German Symposium (Berlin, Germany, Nov. 2000).
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67. Nanoscale fabrication and characterization, 3O h+G
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M. Aono, 3S.v |'e%No4X J6I)g!Y
Asia-Pacific Surface & Interface Analysis Conference (Beijing, China, Oct. 2000). &W/F"s8|6a aT0U
66. New Methods for nanoscale fabrication and characterization, Ee|7Q:G{
M. Aono,
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Trends in Nanotechnology 2000 (TNT2000) (Toledo, Spain, Oct. 2000). 7T7Q%?,|9]
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65. New methods for nanoscale structure fabricatiaon and property measurement,
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M. Aono,
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The 8th Asia Pacific Physcics Conference (Tapei, Taiwan, Aug. 2000). %Tzp
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64. New methods for ananoscale structure fabricataion and property measurement, V
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M. Aono,
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2nd UK-Japan Seminar (Harima, Japan, July 2000).
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63. Nanostructure fabrication and property measurement using STM-based new methods, u zvs-MC*{Y
M. Aono,
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5th Intnational Symposium on Advanced Physical Fields (Tsukuba, Japan , Mar. 2000).
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62. New methods to measure electrical , optical, and magnetic properties on the nanometer scale,
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M. Aono, gc9qN
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AVS Meeting (46th International Symposium on “Vacuum, Thin Films, Surfaces/ Interfaces and Processing” (Seattle, U. S. A., Oct. 1999). 5i4e Kq0k9a
61. Structure fabrication and physical property measurement on the nanometer scale, )r%RU h(u
M. Aono, \} h&og@2ZQ g~
9th ICPE, Precision Science and Technology for Perfect Sciences (Osaka, Japan, Aug. 1999).
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60. Nanoscale structure fabrication and property measurement by STM-based new method,
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M. Aono,
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10th International Conference on Scanning Tunneling Microscopy/ Spectros- copy and Related Proximal Probe Microscopy (STM '99) (Seoul, Korea, July 1999).
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59. New methods to explore novel properties of nanostructures,
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M. Aono, C.-S. Jiang, T. Nakayama, T. Okuda, C. Thirstrup, M. Sakurai, Z.-H. Wu, and S. Qiao,
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International Symposium on Surface and Interface: Properties of Different Symmetry Crossing (Tokyo, November 1998).
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58. Methods to measure local electrical optical and magnetic properties on the nanometer scale, w0n8D0Nk
M. Aono,
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France-Japan Workshop N2M`98 (Toulouse, France, November 1998). J E_-fw
57. Experimental methods to explore novel properties of nanostructures, 3|#Hcf
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M. Aono, C.-S. Jiang, T. Nakayama, T. Okuda, C. Thirstrup, M. Sakurai, Z.-H. Wu., and S. Qiao,
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Spanish-Japanese Symposium on Nano Scale Science (Madrid, Spain, October 1998).
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56. New methods based on STM to measure electrical, optical, and magnetic properties on the nanometer scale, 'nM ])Qk'e)nv
M. Aono, T. Nakayama, C.-S. Jiang, T. Okuda, C. Thirstrup, M. Sakurai, Z.-H. Wu, and S, Qiao,
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1998 Taipei International Symposium on Surfaces and Thin Films (Hsinchu, Taiwan, March 1998).
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55. Measuring electrical, optical, and magnetic properties of nanostructures with new methods based on STM,
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M. Aono, T. Nakayama, C.-S. Jiang, T. Okuda, C. Thirstrup, M.Sakurai, Z.-H. Wu, and S. Qiao,
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US-Japan Symposium on Surface Science (3S'98) (Park City, Otah, U.S.A., March 1998). 7?%Fg6h/W9R F
54. STM-Induced light emission from nanostructures created on hydrogen- terminated silicon surfaces by STM, D2X _R y.V:i J
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C. Thirstrup, M. Sakurai, Z.-H. Wu, T. Nakayama, and M. Aono,
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Workshop on Science and Technology of Hydrogen-Terminated Silicon Surfaces (Tsukuba, November, 1997). #v c ~ i$s0Y9S
53. Atomic level characterization of electronic and magnetic states by the observation of STM-induced light emission,
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Z.-H. Wu, T. Nakayama, C. Thirstrup, M. Sakurai, and M. Aono,
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International Symposium on Atomic Level Characterization for New Materials and Devices `97 (Maui, Hawaii, U.S.A., November, 1997). yW7J1F:]` K8p
52. A few interesting phenomena related to electron tunneling in scanning tunneling microscopy, )|)}&] H8Q!h/m BF\
Z.-H. Wu, T. Nakayama, M. Sakurai, C.-S.Jiang, and M. Aono,
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IFES44 (44th International Field Emission Symposium) (Tsukuba, July, 1997).
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51. Mechanism of atomic-scale lithography, "x;TZ^ _
M. Aono, b,}O:U6[x6tI}F
Japanese-Swiss Science Seminar: Nanoscience - The Impact of Scanning Probe Microscopy (Ascona, Switzerland, December, 1996). Am](B
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50. Medium-energy coaxial impact-collision ion scattering spectroscopy (ME- CAICISS) for subsurface structure analysis, )g4~,C;A/`t G\
A. Kobayashi, G. Dorenbos, C. F. McConville, and M. Aono, r4Y6`7s)k4t4R
IISC-11 (11th International Workshop on Inelastic Ion Surface Collisions) (Wangerooge, Germany, September, 1996). XEtJ;S2x.Sq-\
49. Physical mechanisms of STM atom manipulation, q U/c(LC
M. Aono, } ^.e q S5?m~ h
NANO IV (Fourth International Conference on Nanometer-scale Science & Technology) (Beijing, China, September, 1996).
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48. Physical Mechanism of Atom Extraction, Deposition, and Displacement by the Tip of STM, (A R'yIPY!|U5W
M. Aono, {*o$|@5F:S"~@ S
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ICAMD'96 (Phoenix Park, Kangwon-Do, Korea, June, 1996). D-]#c6X$C9R
47. Atom manipulation by the STM and tip-sample interaction,
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M. Aono,
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Beckman/Hitachi/RIKEN Workshop on Molecular and Electronic Nano- structures (Urbana-Champaign, U.S.A., October, 1995).
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46. STM-based nanostructure fabrication and nano-age tip mechanics, F$AQ+I+V:_*d6P[k
M. Aono, ;plK]"wF:v&Z
NATO Advanced Research Workshop on Nano-age Mechanics (Loch Lomond, Scotland, October,1995). S Eg&F L s
45. Atomic-scale surface modification using STM,
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M. Aono,
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IVC-13/ICSS-9 (Yokohama, Japan, September, 1995). X p0O Q:fNUt
44. STM single atom manipulation and its real-time observation,
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M. Aono,
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Scanning Microscopy 1995 Meeting (Texas, U.S.A., May ,1995). W;m+Sv V)^ w V
43. Methods and mechanisms of atom manipulation by the scanning tunneling microscope,
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M. Aono, }"D$V1u7QrM?k
7th Intern. Conf. on Solid Films and Surfaces (Hsinchu, Taiwan, December, 1994). nL"^#hZ8QD
42. Atomic studies of surface diffusion on solid surfaces, a3@0rED)T ^+Q
M. Aono,
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1994 IUMRS Intern. Conf. on Electronic Materials (Taiwan, December, 1994). 7koY[:q$J;{k4@
41. Manipulation of atoms on semiconductor surfaces, t A(cr:Z'J:QK,m5d
M. Aono,
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7th Intern. Symp. on Small Particles and Inorganic Clusters (Kobe, Japan, September, 1994). -AA%d x&d
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40. Single-atom manipulation and its real-time detection by STM,
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M. Aono,
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1994 Intern. Conf. on Solid State Devices and Materials (Yokohama, Japan, August, 1994).
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39. Time-of-flight low- and medium-energy ion scattering spectrometry applied for thin film growth,
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M. Aono, "{QCJ B1RA5@
Gordon Res. Conf. on Particle Solid Interactions (Plymouth, U.S.A., August, 1994).
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38. Single atom manipulation and its real-time detection by the STM, *[8b m,y o J5I
M. Aono, 'v ])F }'D#n
38th Intern. Symp. on Electron, Ion and Photon Beams (New Orleans, U.S.A. June, 1994).
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37. Japanese perspective on nanotechnology,
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M. Aono,
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NATO Advanced Research Workshop (Cambridge, U.K., April, 1994). s%UB(]:Y
36. Science and technology for manipulating single atoms,
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M. Aono, ?8O O!^!F0^b
1994 JRCAT Intern. Symp. on Atom Technology (Tokyo, Japan, February, 1994).
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35. Atomic-scale surface structure modification,
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M. Aono,
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1st Asian Workshop on Scanning Tunneling Microscopy (Sendai, Japan, February,1994). Iv5q7i.E[
34. Extraction, deposition, and displacement of single atoms and their real-time detection, ;_w"g*FB
M. Aono, :u/[ O+e%z(U
JRDC Intern. Symp. on Nanostructures and Quantum Effects (Tsukuba, Japan, November, 1993).
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33. Science and engineering for manipulation atoms by scanning tunneling microscope, LQ2\ vjQJ
M. Aono, V
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Intern. Symp. on Quantum Chemistry and Technology in the Mesoscopic Level (Fukui, Japan, September, 1993).
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32. How can we use single-atom manipulation by the STM for surface science?,
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M. Aono,
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4th Intern. Conf. on the Structure of Surfaces (Shanghai, P. R. China, August, 1993). c0A+C.x2B| ?,?8W%T
31. Atomic-scale surface modification by the scanning tunneling microscope, -lT2dn}7q
M. Aono, Yw2K%W!c6[[;R
4th Intern. Conf. on the Formation of Semiconductor Interface (ICFSI-4) (Julich, Germany, June, 1993).
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30. Extraction, deposition, and displacement of single atoms by the STM, 5k ] \&?
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M. Aono,
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Workshop on Atomic Order Measurement and Control (Saitama, Japan, April, 1993).
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29. Tip-sample interactions in the STM for atomic-scale surface structure modification, .\J N;b
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M. Aono, *nL X,l4g y8l,|3H:j
Intern. Conf. on Nanoscale Science -Present and Its Future (Sendai, Japan, September, 1992). 8x'mi+Xl3@}
28. Field evaporation from sample and tip in the STM for atomic-scale surface structure modification,
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M. Aono, .o0^ Bo{5v F$p7q
Conf. on Atomic and Nanoscale Modification of Materials (California, U.S.A., August, 1992). D
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27. Field transfer of atoms in the STM,
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M. Aono,
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Gordon Res. Conf. on the Chemistry and Physics of Microstructure Fabrication (New London, U.S.A, July, 1992). HQ-Y3v1~b WXYz
26. Atomcraft,
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M. Aono, h$~1ar _.V
Intern. Symp. on Trends in Surface Science (Taipei, R.O.C., March, 1992). 0L6x TY%Ml W L3|
25. Recent progress in low energy ion scattering,
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M. Aono, 'i!]8^9P@^,U3B
Intern. Symp. on Trends in Surface Science (Taipei, R.O.C., March, 1992). j}C3A {l
24. Prospects for "Atomcraft",
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M. Aono,
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Nature's 3rd Conf. on Nanotechnology Science at the Atomic Scale (Tokyo, Japan, January, 1992).
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23. Progress report on atomcraft project, B/R)vfQ
M. Aono,
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Korean Vacuum Soc. (Seoul, Korea, January, 1992). 0czJY$A
22. New or novel properties: Impact and future directions,
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M. Aono, +C+E*we.whK d z
USA-Japan Workshop on Nanoscale Research: Impact and Future Directions (Tokyo, Japan, November, 1991).
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21. Exploring surface and interface structures by coaxial impact-collision ion scattering spectroscopy (CAICISS), -k X6z7^*C e#{
M. Aono, .[.C{+F g'gv,F1[$j!J
10th Intern. Conf. on Ion Beam Analysis (Eindhoven, The Netherlands, July, 1991).
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20. On Aono Atomcraft Project and ultra-fine fabrication with STM,
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M. Aono, _Qw"G
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Focused Ion Beam Symp. (Noda, Japan, June, 1991).
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19. Controlling parameters in nanometer-scale structure fabrication using field evaporation in STM, gP)N orMYe0\
M. Aono, 0[l*W O.~
Mini-Symposium on Scanning Tunneling Microscopy (Sendai, Japan, May, 1991).
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18. Structure of the Si(111)√3×√3-Ag surface,
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M. Aono, M. Katayama, M.Kato, S. Watanabe, and M. Tsukada, @;m&v3p-I#Q
March Meeting of Amer. Phys. Soc. (Anaheim, U.S.A., March, 1991).
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17. Surface and shallow interface structural analysis by coaxial impact collision ion scattering spectroscopy (CAICISS),
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M. Aono,
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3rd NEC Symp. on Fundamental Approach to New Material Phases (Hakone, Japan, October 1990). "|]
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16. Structure and electronic state of the CaF2/Si(111) interface in the initial stage of its formation,
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S. Kamiya, M. Aono, B. V. King, R. Delay, and M. Katayama,
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3rd Intern. Conf. on the Structure of Surface (Milwaukee, U.S.A., July, 1990).
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15. New evident experimantal results on the structure of Si(111)√3×√3R30°-Ag,
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M. J. Ramstad, M. Aono, E. Nomura, and M. Katayama,
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3rd Intern. Conf. on the Structure of Surfaces (Milwaukee, U.S.A., July, 1990).
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14. Surface structure determination by coaxial impact-collision ion scattering spectroscopy (CAICISS),
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M. Aono,
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11th Intern. Vacuum Cong. and 7th Intern. Conf. on Solid Surfaces (Cologne, F.R.Germany, September, 1989).
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13. Structural monitoring in real time during heterostructure formation with a novel low energy ion scattering spectroscopy,
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M. Aono,
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Spring Meeing of Mater. Res. Soc. (San Diego, U.S.A., April, 1989). 9`([:R@|F7l
12. Surface structure observation during MBE growth by a novel low energy ion scattering method,
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M. Aono,
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2nd Intern. Conf. on Formation of Semiconductor Interfaces (Takarazuka, Japan, November, 1988).
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11. Recent development in low-energy ion scattering spectroscopy (ISS) for surface structure analysis,
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M. Aono, S'}q/w-[-Y [
7th Intern. Conf. on Ion Implantation Technology (Kyoto, Japan, June, 1988).
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10. Interactions of low-energy He+, Heo, and He* with solid surfaces, Nr#ly\
R. Souda and M. Aono, a ^b(dj.o2y~
7th Intern. Conf. on Ion Beam Analysis (Berlin, F. R. Germany, July, 1985). *S/eCnB3e
9. Structure analysis of Ag overlayers on Si(111) by low-energy Li+ ion scattering, 3}!_9Q(C[%e
M. Aono, R. Souda, C. Oshima, and Y. Ishizawa,
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1st Intern.Conf. on the Formation of Semiconductor Interfaces (Marseille, France, June, 1985).
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8. Surface structure analysis by impact collision ion scattering spectroscopy, 9b
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M. Aono, +N-Q ~R5f7i \
31st Natl. Symp. of Amer. Vacuum Soc. (Reno, Nevada, U.S.A., December, 1984).
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7. Structure analysis of semiconductor and inorganic compound surfaces by impact collision ion scattering spectroscopy,
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M. Aono,
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1st Intern. Conf.on the Structure of Surfaces (Berkeley, U.S.A., August, 1984). 6U"|'YsET
6. Low energy ion scattering studies of surfaces,
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M. Aono,
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1984 Gordon Res. Conf. on Particle-Solid Interactions (New Hampshire, U.S.A., July, 1984).
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5. Impact collision ion scattering spectroscopy, 7X"B BHU+T*A
M. Aono,
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Amer. Phys. Soc. March Meeting (Detroit, U.S.A., March, 1984). x]9r4|9]7\R8a x
4. Atomic structure analysis of silicon surfaces by specialized low-energy ion scattering spectroscopy,
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M. Aono,
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Amer. Chem. Soc. Symp. on Electron, X-Ray, and Ion Spectroscopies and their Application to Surface Chemistry (Honolulu, Hawaii, U.S.A., December, 1983).
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3. A specialization of low-energy ion scattering spectroscopy and its application to surface studies of TiC, [ UxP I y
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30th Nat. Symp. of Amer. Vacuum Soc. (Boston, U.S.A., November, 1983). N F)ZOe%?4\ K
2. Quantitative surface structure analysis by low-energy ion scattering,
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M. Aono,
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10th Intern. Conf. on Atomic Collision in Solids (Bud Iburg, Germany, July, 1983). ei"As;^,uK
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1. Low energy ion scattering from the Si(111) surface, s(r/T.d0@ VO
M. Aono, R. Souda, C. Oshima, and Y. Ishizawa,
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6th Intern. Conf. on Ion Beam Analysis (Tempe, Arizona, U.S.A., May, 1983). -c&d[~k+T&h8m`#v
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Click each item
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Researches:?K7~#b&O E6dGc6@/p
Current researches on nanoscale science and technology:
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1) Atomic switch v)@p+zPEE r+^(D
- Invention, development, and practical application -,l6~
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2) Multiprobe SPMs (STM and AFM) [ in preparation ] UM4O${bW _h.p
- Nanoscale electrical conductivity measurement etc.-+d8}d$dv }zZ
3) Nanochemistry [ in preparation ] Z9e \%WY"L_e
- Controlling novel chemical reactions at the molecular scale -
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4) STM combined with synchrotron X-rays [ in preparation ] -gV(zr9D[ oM
- Elemental identification in STM image observation etc.-p/iXn~~on/[*]
Previous researches on nanoscale science and technology:
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5) Aono Atomcraft Project ,|:~a XwE
- Atom manipulation and nanoscale structure fabrication -6p!Fn1JY"xK QN
Early researches on surface science:
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6) Surface and bulk energy bands (dispersion relation) [ in preparation ] `4?)Xil)I.VK-v4S Ql
- Analysis by angle-resolved photoelectron spectroscopy -
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7) Surface structure analysis
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- Development of specialized ion scattering spectroscopy -#V/Tk@4W.\H(P
Links
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NIMS (National Institute for Materials Science)