查看完整版本: A Review of Metrology for Nanoelectronics

A Review of Metrology for Nanoelectronics

Galatsis, K.; Potok, R.; Wang, K.L.
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N-pz~j-k Semiconductor Manufacturing, IEEE Transactions on.~*` VO8z_x:f e
Volume 20, Issue 4, Nov. 2007 Page(s):542 - 548
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N Digital Object Identifier   10.1109/TSM.2007.907631
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[box=PaleGreen]This paper highlights some new and old techniques that will have important metrology inroads for nanoelectronics beyond CMOS. Traditional electron microscopy techniques are envisioned to remain and play a core role at the nanoscale level, and others such as probing techniques and special holographic imaging will further be enhanced and provide more diverse capabilities. The paper presents metrology techniques for beyond CMOS as presented at the First Metrology for Beyond CMOS workshop hosted by the Focus Center Research Program Center of Functional Engineered Nano Architectonics, the National Science Foundation Nanoscale Science and Engineering Center for Nanoprobing, and the California Institute of Technology (CNSI).[/box]
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7D#b"\9UfGD2s [[i] 本帖最后由 nano-st 于 2008-05-15 00:42 编辑 [/i]]

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