nano 2008-04-25 03:34
IEEE Transactions on Nanotechnology Top Documents Accessed: Mar 2008
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[table=98%][tr][td][align=left][b]1.[/b][/align][/td][td=1,1,76%][b]Photonic Crystal Drop Filter Exploiting Resonant Cavity Configuration[/b]
Dapos;Orazio, A.; De Sario, M.; Marrocco, V.; Petruzzelli, V.; Prudenzano, F.
Nanotechnology, IEEE Transactions on
Volume 7, Issue 1, Date: Jan. 2008, Pages: 10-13
Digital Object Identifier 10.1109/TNANO.2007.913427
[b]Summary: [/b]Band dropping devices are widely used in WDM application. In this paper the design of a two-dimensional photonic crystal drop filter is proposed. Different from the configuration reported in literature which are realized by means of a photonic bandgap...
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[/td][td][url=http://ieeexplore.ieee.org/xpls/abs_all.jsp?&arnumber=4395254][color=#0000ff]Abstract[/color][/url] | Full Text: [url=http://ieeexplore.ieee.org/iel5/7729/4429292/04395254.pdf][color=#0000ff]PDF[/color][/url] (1098 KB)
[/td][/tr][/table][table=98%][tr][td][align=left][b]2.[/b][/align][/td][td=1,1,76%][b]Graphene Terahertz Plasmon Oscillators[/b]
Rana, F.
Nanotechnology, IEEE Transactions on
Volume 7, Issue 1, Date: Jan. 2008, Pages: 91-99
Digital Object Identifier 10.1109/TNANO.2007.910334
[b]Summary: [/b]In this paper we propose and discuss coherent terahertz sources based on charge density wave (plasmon) amplification in two-dimensional graphene. The coupling of the plasmons to interband electron-hole transitions in population inverted graphene layer...
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[/td][td][url=http://ieeexplore.ieee.org/xpls/abs_all.jsp?&arnumber=4362685][color=#0000ff]Abstract[/color][/url] | Full Text: [url=http://ieeexplore.ieee.org/iel5/7729/4429292/04362685.pdf][color=#0000ff]PDF[/color][/url] (1000 KB)
[/td][/tr][/table][table=98%][tr][td][align=left][b]3.[/b][/align][/td][td=1,1,76%][b]Electron Mobility in Silicon Nanowires[/b]
Ramayya, E. B.; Vasileska, D.; Goodnick, S. M.; Knezevic, I.
Nanotechnology, IEEE Transactions on
Volume 6, Issue 1, Date: Jan. 2007, Pages: 113-117
Digital Object Identifier 10.1109/TNANO.2006.888521
[b]Summary: [/b]The low-field electron mobility in rectangular silicon nanowire (SiNW) transistors was computed using a self-consistent Poisson-Schroumldinger-Monte Carlo solver. The behavior of the phonon-limited and surface-roughness-limited components of the mobil...
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[/td][td][url=http://ieeexplore.ieee.org/xpls/abs_all.jsp?&arnumber=4063341][color=#0000ff]Abstract[/color][/url] | Full Text: [url=http://ieeexplore.ieee.org/iel5/7729/4063320/04063341.pdf][color=#0000ff]PDF[/color][/url] (717 KB)
[/td][/tr][/table][table=98%][tr][td][align=left][b]4.[/b][/align][/td][td=1,1,76%][b]Finite-Size Effect on Band Structure and Photoluminescence of Semiconductor Nanocrystals[/b]
Lang, X.Y.; Zheng, W.T.; Jiang, Q.
Nanotechnology, IEEE Transactions on
Volume 7, Issue 1, Date: Jan. 2008, Pages: 5-9
Digital Object Identifier 10.1109/TNANO.2007.913426
[b]Summary: [/b]Based on a model for size-dependent atomic cohesive energy of nanocrystals, a simple and unified model, without any adjustable parameter, has been established for finite size effect on shifts of valence and conduction band edges [DeltaEV(D)...
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[/td][td][url=http://ieeexplore.ieee.org/xpls/abs_all.jsp?&arnumber=4395255][color=#0000ff]Abstract[/color][/url] | Full Text: [url=http://ieeexplore.ieee.org/iel5/7729/4429292/04395255.pdf][color=#0000ff]PDF[/color][/url] (279 KB)
[/td][/tr][/table][table=98%][tr][td][align=left][b]5.[/b][/align][/td][td=1,1,76%][b]Single-walled carbon nanotube electronics[/b]
McEuen, P.L.; Fuhrer, M.S.; Hongkun Park
Nanotechnology, IEEE Transactions on
Volume 1, Issue 1, Date: Mar 2002, Pages: 78-85
Digital Object Identifier 10.1109/TNANO.2002.1005429
[b]Summary: [/b]Single-walled carbon nanotubes (SWNTs) have emerged as a very promising new class of electronic materials. The fabrication and electronic properties of devices based on individual SWNTs are reviewed. Both metallic and semiconducting SWNTs are found to...
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[/td][td][url=http://ieeexplore.ieee.org/xpls/abs_all.jsp?&arnumber=1005429][color=#0000ff]Abstract[/color][/url] | Full Text: [url=http://ieeexplore.ieee.org/iel5/7729/21698/01005429.pdf][color=#0000ff]PDF[/color][/url] (423 KB)
[/td][/tr][/table][table=98%][tr][td][align=left][b]6.[/b][/align][/td][td=1,1,76%][b]Vertically Oriented Titania Nanotubes Prepared by Anodic Oxidation on Si Substrates[/b]
Yang, D.-J.; Kim, H.-G.; Cho, S.-J.; Choi, W.-Y.
Nanotechnology, IEEE Transactions on
Volume 7, Issue 2, Date: March 2008, Pages: 131-134
Digital Object Identifier 10.1109/TNANO.2007.909439
[b]Summary: [/b]Vertically oriented titania nanotube arrays were fabricated by anodization of titanium film deposited on silicon substrates under different processing conditions. The anodic formation of nanoporous titania on silicon substrate was investigated ...
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[/td][td][url=http://ieeexplore.ieee.org/xpls/abs_all.jsp?&arnumber=4359139][color=#0000ff]Abstract[/color][/url] | Full Text: [url=http://ieeexplore.ieee.org/iel5/7729/4471806/04359139.pdf][color=#0000ff]PDF[/color][/url] (2138 KB)
[/td][/tr][/table][table=98%][tr][td][align=left][b]7.[/b][/align][/td][td=1,1,76%][b]Nanotechnology goals and challenges for electronic applications[/b]
Bohr, M.T.
Nanotechnology, IEEE Transactions on
Volume 1, Issue 1, Date: Mar 2002, Pages: 56-62
Digital Object Identifier 10.1109/TNANO.2002.1005426
[b]Summary: [/b]Si metal-oxide-semiconductor field-effect transistor (MOSFET) scaling trends are presented along with a description of today's 0.13-μm generation transistors. Some of the foreseen limits to future scaling include increased subthreshold leakage, inc...
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[/td][td][url=http://ieeexplore.ieee.org/xpls/abs_all.jsp?&arnumber=1005426][color=#0000ff]Abstract[/color][/url] | Full Text: [url=http://ieeexplore.ieee.org/iel5/7729/21698/01005426.pdf][color=#0000ff]PDF[/color][/url] (249 KB)
[/td][/tr][/table][table=98%][tr][td][align=left][b]8.[/b][/align][/td][td=1,1,76%][b]Photoresponse of ZnO Tetrapod Nanocrystal Schottky Diodes[/b]
Newton, M.C.; Firth, S.; Warburton, P.A.
Nanotechnology, IEEE Transactions on
Volume 7, Issue 1, Date: Jan. 2008, Pages: 20-23
Digital Object Identifier 10.1109/TNANO.2007.915207
[b]Summary: [/b]The fabrication of an ultraviolet photodiode employing a single ZnO tetrapod nanocrystal is reported. We have attached two tungsten leads and one platinum lead to three of the arms of the tetrapod. By measuring the transport properties between each pa...
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[/td][td][url=http://ieeexplore.ieee.org/xpls/abs_all.jsp?&arnumber=4429298][color=#0000ff]Abstract[/color][/url] | Full Text: [url=http://ieeexplore.ieee.org/iel5/7729/4429292/04429298.pdf][color=#0000ff]PDF[/color][/url] (418 KB)
[/td][/tr][/table][table=98%][tr][td][align=left][b]9.[/b][/align][/td][td=1,1,76%][b]Spin Injection Efficiency at the Source/Channel Interface of Spin Transistors[/b]
Wan Junjun; Cahay, M.; Bandyopadhyay, S.
Nanotechnology, IEEE Transactions on
Volume 7, Issue 1, Date: Jan. 2008, Pages: 34-39
Digital Object Identifier 10.1109/TNANO.2007.911317
[b]Summary: [/b]Almost all spintronic transistors (e.g., spin field-effect transistors, spin bipolar transistors, and spin-enhanced MOSFETs) require high efficiency of spin injection from a ferromagnetic contact into a semiconductor channel for proper operation. In t...
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[/td][td][url=http://ieeexplore.ieee.org/xpls/abs_all.jsp?&arnumber=4378196][color=#0000ff]Abstract[/color][/url] | Full Text: [url=http://ieeexplore.ieee.org/iel5/7729/4429292/04378196.pdf][color=#0000ff]PDF[/color][/url] (390 KB)
[/td][/tr][/table][table=98%][tr][td][align=left][b]10.[/b][/align][/td][td=1,1,76%][b]High-Performance Twin Silicon Nanowire MOSFET (TSNWFET) on Bulk Si Wafer[/b]
Suk, S. D.; Yeo, K. H.; Cho, K. H.; Li, M.; Yeoh, Y. Y.; Lee, S. -Y.; Kim, S. M.; Yoon, E. J.; Kim, M. S.; Oh, C. W.; Kim, S. H.; Kim, D.-W.; Park, D.
Nanotechnology, IEEE Transactions on
Volume 7, Issue 2, Date: March 2008, Pages: 181-184
Digital Object Identifier 10.1109/TNANO.2008.917843
[b]Summary: [/b]A gate-all-around (GAA) twin silicon nanowire MOSFET (TSNWFET) with 5-nm-radius channels on a bulk Si wafer is successfully fabricated to achieve extremely high-drive currents of 2.37 mA/μ m for...
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[/td][td][url=http://ieeexplore.ieee.org/xpls/abs_all.jsp?&arnumber=4445654][color=#0000ff]Abstract[/color][/url] | Full Text: [url=http://ieeexplore.ieee.org/iel5/7729/4471806/04445654.pdf][color=#0000ff]PDF[/color][/url] (644 KB)
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[[i] 本帖最后由 nano 于 2008-04-24 11:36 编辑 [/i]]