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Facile Synthesis and Characterization of Graphene Nanosheets

Guoxiu Wang,* Juan Yang, Jinsoo Park, Xinglong Gou, Bei Wang, Hao Liu, and Jane Yao 8rVY^-aw,x
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Materials Chemistry Research Group, School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, NSW 2522, Australia#_!la5G+d
Received: November 16, 2007
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Abstract:,cXX,B)e2} |/m7HQ
Graphene nanosheets were produced in large quantity via a soft chemistry synthetic route involving graphite oxidation, ultrasonic exfoliation, and chemical reduction. X-ray diffraction and transmission electron microscopy (TEM) observations show that graphene nanosheets were produced with sizes in the range of tens to hundreds of square nanometers and ripple-like corrugations. High resolution TEM (HRTEM) and selected area electron diffraction (SAED) analysis confirmed the ordered graphite crystal structure of graphene nanosheets. The optical properties of graphene nanosheets were characterized by Raman spectroscopy.
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UgYP ASAP J. Phys. Chem. C, ASAP Article, 10.1021/jp710931h "J$q4xoZ ~"N5pTHA
Web Release Date: May 1, 2008
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b Copyright © 2008 American Chemical Society
"cs8j%V1TTl Z [url]http://pubs.acs.org/cgi-bin/abstract.cgi/jpccck/asap/abs/jp710931h.html[/url]

Noncatalytic synthesis of carbon nanotubes, graphene and graphite on SiC

Graphene and carbon nanotubes (CNT) can be produced by vacuum decomposition of SiC, but discrepancies and conflicting data in the literature limit the use of this method for CNT synthesis. A systematic study of the effects of SiC surface morphology and carbon transport through the gas phase leads to reproducible and controlled growth of arrays of small-diameter (1–4 walls) nanotubes, which show pronounced radial breathing modes in Raman spectra, on either carbon  or silicon (0 0 0 1) face of 6H SiC wafers at 1400–1900 °C. These nanotube arrays have a very high density and are catalyst-free with no internal closures. They show a higher oxidation resistance compared to CNTs produced by catalytic chemical vapor deposition (CVD). Their integration with graphite/graphene or silica layers on SiC wafers is possible in a simple 2-step process and opens new horizons in nanoscale device fabrication.x0?@ ]}4PY1Zs!^
[url]http://dx.doi.org/10.1016/j.carbon.2008.02.013[/url]
&`z*t H+u5W Volume 46, Issue 6, (May 2008) Pages 841-849
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Y Z. Goknur Cambaz, Gleb Yushin, Sebastian Osswald, Vadym Mochalin, Yury Gogotsi

hehehe   看看  正在找做graphene的方法:lol :lol