nano-st 2008-05-15 01:19
34篇星级纳米综述-转铁
1。Carbon Nanotube Electronics
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PROCEEDINGS OF THE IEEE, VOL. 91, NO. 11, NOVEMBER 2003#B'b3Pg P k)V5d,q$bQ-O
PHAEDON AVOURIS, MEMBER, IEEE, JOERG APPENZELLER, RICHARD MARTEL, AND SHALOM J. WIND, SENIOR MEMBER, IEEE~ J n$s2}
We evaluate the potential of carbon nanotubes (CNTs) as the
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basis for a new nanoelectronic technology. After briefly reviewing the electronic structure and transport properties of CNTs, we discuss the fabrication of CNT field-effect transistors (CNTFETs) formed from individual single-walled nanotubes (SWCNTs), SWCNT bundles, or multiwalled (MW) CNTs. The performance characteristics of the CNTFETs are discussed and compared to those of corresponding silicon devices. We show that CNTFETs are very competitive with state-of-the-art conventional devices. We also discuss the switching mechanism of CNTFETs and show that it involves the modulation by the gate field of Schottky barriers at the metal-CNT junctions. This switching mechanism can account for the observed subthreshold and vertical scaling behavior of CNTFETs, as well as their sensitivity to atmospheric oxygen.4b
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The potential for integration of CNT devices is demonstrated by fabricating a logic gate along a single nanotube molecule. Finally,we discuss our efforts to grow CNTs locally and selectively, and a method is presented for growing oriented SWCNTs without the involvement of a metal catalyst.
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Keywords—Carbon nanotubes (CNTs), field-effect transistors (FETs), molecular electronics, nanoelectronics. M;i-Y%kAK(A |/s
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2。 (2005)Self-Assembled Monolayers of Thiolates on Metals as a Form of nanotechnology?lGkG.T+`j ~
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Whitesides GM 和 Nuzzo RG关于自组装的综述。6Q f0hON*p
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3。 Functionalization of Single-Walled Carbon Nanotubes)VQ pM6E
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Abstract: Through chemical functionalization of single walled carbon nanotubes, the prerequisites for possible applications of such nanostructures are established. The derivatized tubes differ from the crude materials in their good solubility, which enables both a more extensive characterization and subsequent chemical reactivity. Current derivatization methods include defect and covalent sidewall functionalization, as well as noncovalent exo- and endohedral functionalization. In this way, for6n:U:y"I+]4ovY
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example, a range of nanotubes can be prepared: with sidewall substituents, wrapped with polymers, or with guest molecules included. The current state of the literature is presented in this Minireview.
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4。Development of Carbon Nanotube-Based Sensors—A Review
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IEEE SENSORS JOURNAL, VOL. 7, NO. 2, FEBRUARY 2007;xyZ:r R
Abstract—Carbon nanotubes (CNTs) have shown great promise as sensing elements in nanoelectromechanical sensors. In this review paper, we discuss the electrical, mechanical, and electromechanical properties of CNTs that are used in such applications. B Y+c2|M1d T$M
This investigation indicates which nanotube properties should be carefully considered when designing nanotube-based sensors. We then present the primary techniques that have been used for the integration of nanotubes into devices and proceed to give a description of sensors that have been developed using CNTs as active sensing elements. ^\%M~6e
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5。Light in tiny holes &U Y0zE
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The presence of tiny holes in an opaque metal film, with sizes smaller than the wavelength of incident light, leads to a wide variety of unexpected optical properties such as strongly enhanced transmission of light through the holes and wavelength filtering. These intriguing effects are now known to be due to the interaction of the light with electronic resonances in the surface of the metal film, and they can be controlled by adjusting the size and geometry of the holes. This knowledge is opening up exciting new opportunities in applications ranging from subwavelength optics and optoelectronics to chemical sensing and biophysics.
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Nature 445, 39-46 (4 January 2007) | doi:10.1038/nature05350E&S qWeq
Correspondence to: T. W. Ebbesen1 Correspondence should be addressed to T.W.E. (Email: [email]ebbesen@isis-ulp.org[/email]).
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6。Carbon "peapods"—a new tunable nanoscale graphitic structure (Review)|2B G:W q8T!t
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We consider the electronic properties of empty single-wall nanotubes (SWNT) and SWNT filled with fullerene molecules (carbon "nano-peapods"). The first part of the review (Sec. II) is devoted mostly to the Luttinger liqued properties of individual metallic SWNT coupled to metallic electrodes or to superconducting leads. The discovery of carbon "nano-peapods" and their elastic, electric and thermal properties are reviewed in the second part of the paper (Sec. III). We suggest in particular how fullerene and metallofullerene molecules can be released from a "nano-peapod" by a purely electrostatic method.5q3Fl nx'Z,c tqe
I. V. Krive "K2aZ `x ^;@{
Department of Physics, Göteborg University, SE-412 96 Göteborg, Sweden; B. Verkin Institute for Low Temperature Physics and Engineering, National Academy of Sciences of Ukraine, 47 Lenin Ave., Kharkov 61103, Ukraine ;R Z9{t#t1p
R. I. Shekhter and M. Jonson
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Department of Physics, Göteborg University, SE-412 96 Göteborg, Sweden
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doi:10.1063/1.2364474
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7。Inorganic nanowiresq R3u:AY:K `%o
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C.N.R. Rao , F.L. Deepak, Gautam Gundiah, A. Govindaraj Chemistry and Physics of Materials Unit and CSIR Centre of Excellence in Chemistry, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P.O., Bangalore 560 064, India
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Progress in Solid State Chemistry 31 (2003) 5–147iS#wM$d3w
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Since the discovery of carbon nanotubes, there has been great interest in the synthesis and characterization of other one-dimensional materials. A variety of inorganic materials have
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been prepared in the form of nanowires with a diameter of a few nm and lengths going up to several microns. In order to produce the nanowires, both vapor-growth and solution growth processes have been made use of. Besides physical methods, such as thermal evaporation and laser ablation, chemical methods including solvothermal, hydrothermal and carbothermal reactions have been employed for their synthesis. In this article, we describe the synthesis, structure and properties of nanowires of various inorganic materials, which include elements, oxides, nitrides, carbides and chalcogenides. Wherever possible, we have also included the relevant information on related one-dimensional materials, such as nanobelts.9k#Z
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# 2003 Elsevier Ltd. All rights reserved.a&nu7rr'g&o q
Keywords: Nanostructures; Nanowires; Nanorods; One-dimensional materials
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Contents.I
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1. Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74Zj/[ I G[;{0t!X3U
2. Syntheticstrategies . . . . . . . . . .. . . . . . . . . . . . . . . . 8#{ Mi5p'`8H-_
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2.1. Vapor phase growth of nanowires . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
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2.1.1. Vapor–liquid–solid growth . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
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2.1.2. Oxide-assisted growth . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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2.1.3. Vapor–solid growth . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125]s,X
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2.1.4. Carbothermal reactions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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2.2. Solution based growth of nanowires . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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2.2.1. Highly anisotropic crystal structures . . . . . . . . . . . . . . . . . . . . . . 14-N\:D9@ \Sn&q
Corresponding author. Tel.: +91-80-846-2760; fax: +91-80-856-3075.)I[\g)nj\5T#?
E-mail address: [email]cnrrao@jncasr.ac.in[/email] (C.N.R. Rao).%SuL&^&?1sO2fL
0079-6786/$ - see front matter # 2003 Elsevier Ltd. All rights reserved. q:t$O [}$rY
doi:10.1016/j.progsolidstchem.2003.08.001
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2.2.2. Template-based synthesis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14b-[d
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2.2.3. Solution–liquid–solid process . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 N*o;F:z^e'@@
2.2.4. Solvothermal synthesis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16"VrGb5ae g5^
2.3. Growth control and integration. . . . . . . . . . . . . . . . . . . . . . . 16 k%PMr;t
3. Elemental nanowires . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 x'B(fH)n%s
3.1. Silicon . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
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3.2. Germanium . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 241pR;Q*DGmrm Fx@
3.3. Boron . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
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3.4. In, Sn and Pb . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Y
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3.5. Sb and Bi . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . 28
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3.6. Se and Te . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29*Au/gU} V9_ Z
3.7. Compound semiconductors . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Ud
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3.8. Gold. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
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3.9. Silver . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 347bV'l1S9O h {&tw#x#l8?
3.10. Iron . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 B L\6o ynI
3.11. Cobalt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
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3.12. Nickel. . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41%ZAt9a$w
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3.13. Copper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
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3.14. Other metals and alloys. . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . 45*A2Z*}K5U!{
4. Oxide nanowires . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
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4.1. MgO. . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . 472U
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4.2. Al2O3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 Y0s k@"Y j.}bt$B E
4.3. Ga2O3. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
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4.4. In2O3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58Hn b
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4.5. SnO2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61 g5d(fGP^
4.6. Sb2O3 and Sb2O5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
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4.7. SiO2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
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4.8. GeO2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 689]Y
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4.9. TiO2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
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4.10. MnO2 and Mn3O4. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
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4.11. CuxO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74 N rf6Y'u;L }T
4.12. ZnO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
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4.13. V2O5. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
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4.14. WOx . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . 83.s9v3T9o\ Rn W `
4.15. Other binary oxides. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
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4.16. Ternary and quarternary oxides . . . . . . . . . . . . . . . . . . . . . 86t-bl,g/T@
5. Nitride nanowires . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88?9\;m1[l RI ^
5.1. BN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88&ZN0T1kX"y3V
5.2. AlN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91
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5.3. GaN. . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . 94C \ R a2Y8VM
5.4. InN . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . 102
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5.5. Si3N4 and Si2N2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
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6. Metal carbide nanowires . . . . . . . . . . . . . . . . . . . . . . . . . . 109!]O/s/K)~5ZH1c ^#T(f
6.1. Carbides of Al and B . . . . . . . . . . . . . . . . . . . . . . . . . . 109
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6.2. SiC . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . 110
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6.3. TiC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
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7. Metal chalcogenide nanowires . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
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7.1. CdS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
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7.2. CdSe. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117)I#B,P%f8r
7.3. PbS and PbSe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119,OHRd*O%K2VW0|0X
7.4. Bismuth chalcogenides . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
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7.5. Ti, Zr, Hf sulfides . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . 120u q!e3XjM u
7.6. CuS and CuSe . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . 121.L6|$u4s1i/r_ w'S-[q
7.7. ZnS and ZnSe. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123+~){$`)Y6Wc{
7.8. Ag2Se and NiS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
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7.9. NbS2 and NbSe2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126n3j.s5Oy
7.10. Other chalcogenides . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . 126
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8. Other semiconductor nanowires . . . . . . . . . . . . . . . .. . . . . . . . . . . 128V:g9l2A/c2P#UV
8.1. GaAs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128
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8.2. InP . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . 130!OP
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8.3. GaP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131 X6nP Tz&t.g"~1@
9. Miscellaneous nanowires . . . . . . . . . .. . . . . . . . . . . . . . . . . . 132
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10. Concluding remarks . . . . . .
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8。Nanowire and nanobelt arrays of zinc oxide from synthesis to properties"pT
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从单根的制备、性能，再到器件，很好的一篇文章，作者：Xudong Wang, Jinhui Song and Zhong Lin Wang
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9。A bright future for organic field-effect transistors
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A good review paper about OFET published in Nature materials.
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Field-effect transistors are emerging as useful device structures for effi cient light generation from a variety of materials, including inorganic semiconductors, carbon nanotubes and organic thin fi lms. In particular, organic light-emitting fi eld-effect transistors are a new class of electro-optical devices that could provide a novel architecture to address open questions concerning charge-carrier recombination and light emission in organic materials. These devices have potential pplications in optical communication systems, advanced display technology, solid-state lighting and electrically pumped organic lasers. Here, recent advances and future prospects of light-emitting field-effect transistors are explored, with particular emphasis on organic semiconductors and the role played by the material properties, device features and the active layer structure in determining the device performances. j
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10。 Recent progress in processing and properties（有问题）
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对做氧化锌的有用
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S.J. Pearton , D.P. Norton , K. Ip ,&Mx3b _ ~~
Y.W. Heo, T. Steiner
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Progress in Materials Science 50 (2005) 293–340 (C` U D l2j"N yI
ZnO is attracting considerable attention for its possible application to UV light emitters,
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spin functionaldevices, gas sensors, transparent electronics and surface acoustic wave devices.
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There is also interest in integrating ZnO with other wide bandgap ceramic semiconductors
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such as the AlInGaN system. In this paper we summarize recent progress in doping control,/M*Lz;g&R {%P
materials processing methods such as dry etching and Ohmic and Schottky contact formation,O O'u$n3u
new understanding of the role of hydrogen and finally the prospects for control of ferromagnetismUsf9?k MH/z$d
in transition-metaldoped ZnO.
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11。One-dimensional (1D) ZnS Nanomaterials and Nanostructures&L#^rV(s
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Xiaosheng FANG, Lide ZHANG -p |ly m,f Ak
Journal of Materials Science & Technology 2006, 22(06), 721-736
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Abstract:One-dimensional (1D) nanomaterials and nanostructures have received much attention due to their potential interest for understanding fundamental physical concepts and for applications in onstructing nanoscale electric and optoelectronic devices. Zinc sulfide (ZnS) is an important emiconductor compound of II-VI group, and the synthesis of 1D ZnS nanomaterials and nanostructures has been of growing interest owing to their promising application in nanoscale optoelectronic devices. This paper reviews the recent progress on 1D ZnS nanomaterials and nanostructures, including nanowires, nanowire arrays, nanorods, nanobelts or nanoribbons, nanocables, and hierarchical nanostructures etc. This article begins with a survey of various methods that have been developed for generating 1D nanomaterials and nanostructures, and then mainly focuses on structures, synthesis, characterization, formation mechanisms and optical property tuning, and luminescence mechanisms of 1D ZnS nanomaterials and nanostructures. Finally, this review concludes with personal views towards future research on 1D ZnS nanomaterials and nanostructures. &y,GX;M)C,HT
[url]http://www.jmst.org/[/url]
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12。Benchmarking nanotechnology for high-performance and lowpower logic transistor applicationst!m f*w X
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纳器件的benchmark！ 做器件的好参考。
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IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 4, NO. 2, MARCH 2005
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Abstract—Recently there has been tremendous progress made in the research of novel nanotechnology for future nanoelectronic applications. In particular, several emerging nanoelectronic devices AQ ~ c;B
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such as carbon-nanotube field-effect transistors (FETs), Si nanowire FETs, and planar III–V compound semiconductor (e.g.,InSb, InAs) FETs, all hold promise as potential device candidates to be integrated onto the silicon platform for enhancing circuit functionality and also for extending Moore’s Law. For high-performance and low-power logic transistor applications, it is important
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that these research devices are frequently benchmarked against the existing Si logic transistor data in order to gauge the progress of research. In this paper, we use four key device metrics to compare }
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these emerging nanoelectronic devices to the state-of-the-art planar and nonplanar Si logic transistors. These four metrics include: 1) CV/I or intrinsic gate delay versus physical gate~h l/lc'{I
length Lg; 2) energy-delay product versus Lg; 3) subthreshold slope versus ; and 4) CV/I versus on-to-off-state current ratio I ON/ I OFF. The results of this benchmarking exercise indicate that while these novel nanoelectronic devices show promise and opportunities for future logic applications, there still remain shortcomings in the device characteristics and electrostatics that need to be overcome. We believe that benchmarking is a key element in accelerating the progress of nanotechnology research for logic transistor applications. K7L p_s v~
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13. Fulleren聚合体的合成与性质最新review
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Fullerene Polymers: Synthesis and Properties!u6c ^J f,A6V-B
Chemical Reviews
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Contents
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1. Introduction 1L:Ro"}\"dSc7O N
2. All-C60 and Related Polymers 2
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3. Cross-Linked Polymers 6
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4. End-Capped Polymers 8'aMh8lOS&eC:U
5. Star-Shaped Polymers 14b ]7L$l{
6. Main-Chain Polymers 16
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7. Side-Chain Polymers 21o4I$HI6R8s-e"?
8. Double-Cable Polymers 32^'jo dNeg:}'hS
9. Supramolecular Polymers 42cUY'j A9d
10. Summary and Outlook 50~4l
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11. Acknowledgment 50
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12. References 50 :\w8R4Y:Y t8T
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14. TiO2制备H2的最新进展－review
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A review and recent developments in photocatalytic water-splitting using TiO2 for hydrogen production
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Renewable and Sustainable Energy Reviews 11 (2007) 401–425
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Abstract
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Nano-sized TiO2 photocatalytic water-splitting technology has great potential for low-cost, environmentally friendly solar-hydrogen production to support the future hydrogen economy. Presently, the solar-to-hydrogen energy conversion efficiency is too low for the technology to be economically sound. The main barriers are the rapid recombination of photo-generated electron/hole pairs as well as backward reaction and the poor activation of TiO2 by visible light. In response to these deficiencies, many investigators have been conducting research with an emphasis on effective remediation methods. Some investigators studied the effects of addition of sacrificial reagents and
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carbonate salts to prohibit rapid recombination of electron/hole pairs and backward reactions. Other'Dmk D*D G
research focused on the enhancement of photocatalysis by modification of TiO2 by means of metal loading, metal ion doping, dye sensitization, composite semiconductor, anion doping and metal ionimplantation.1iOu"h^ C:Z
This paper aims to review the up-to-date development of the above-mentioned technologies applied to TiO2 photocatalytic hydrogen production. Based on the studies reported in the literature, metal ion-implantation and dye sensitization are very effective methods to extend the activating spectrum to the visible range. Therefore, they play an important role in the development of efficient photocatalytic hydrogen production.
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r 2006 Elsevier Ltd. All rights reserved. s9}.|(w6A] |1y
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15. 纳米线管的储氢和锂电池－南开大学陈军综述,L^_Y[6ffZ
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Storage of hydrogen and lithium in inorganic nanotubes and nanowires
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J. Mater. Res., Vol. 21, No. 11, Nov 2006U5g9d)G/]aV
The search for cleaner and more efficient energy storage and conversion technologies has become an urgent task due to increasing environmental issues and limited energy resources. The aim of energy storage and conversion is to obtain energy with environmental benefit, high efficiency, and low cost (namely, maximum atomic and recycling economy). Progress has been made in the fields of hydrogen storage and rechargeable batteries. The emerging nanotechnology offers great opportunities to improve the performance of existing energy storage systems. Applying nanoscale materials to energy storage offers a higher capacity compared to the bulk counterparts due to the unique properties of nanomaterials such as high surface areas, large surface-to-volume atom ratio, and size-confinement effect. In particular, onedimensional (1D) inorganic nanostructures like tubes and wires exhibit superior electrochemical characteristics because of the combined advantages of small size and 1D morphology. Hydrogen and lithium can be stored in different 1D nanostructures in various ways, including physical and/or chemical sorption, intercalation, and electrochemical reactions. This review highlights some of the latest progress with the studies of hydrogen and lithium storage in inorganic nanotubes and nanowires such as MoS2, WS2, TiS2, BN, TiO2, MnO2, V2O5, Fe2O3, Co3O4, NiO, and SnO2. ?T c_1H
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16. Biomedical Applications of Layer- by-Layer Assembly: From Biomimetics to Tissue Engineering EuVZ H2B
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Z. Tang, Y. Wang, P. Podsiadlo, N. A. Kotov *
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Department of Chemical Engineering, Department of Material Science and Engineering, and Department of Biomedical Engineering, University of Michigan, Ann Arbor, MI 48109-2136, USAZ%v3d'qw K7_O Q
email: N. A. Kotov ([email]kotov@umich.edu[/email]) +MD-i!s:z A0p z
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Keywords KfSO k%@ g
Biomaterials ?Biomedical materials ?Biosensors ?Cells ?Coatings ?Layer-by-layer assembly ? Nanoparticles, metal ?Nanostructures ?Sensors ?Tissue engineering
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The design of advanced, nanostructured materials at the molecular level is of tremendous interest for the scientific and engineering communities because of the broad application of these materials in the biomedical field. Among the available techniques, the layer-by-layer assembly method introduced by Decher and co-workers in 1992 has attracted extensive attention because it possesses extraordinary advantages for biomedical applications: ease of preparation, versatility, capability of incorporating high loadings of different types of biomolecules in the films, fine control over the materials' structure, and robustness of the products under ambient and physiological conditions. In this context, a systematic review of current research on biomedical applications of layer-by-layer assembly is presented. The structure and bioactivity of biomolecules in thin films fabricated by layer-by-layer assembly are introduced. The applications of layer-by-layer assembly in biomimetics, biosensors, drug delivery, protein and cell adhesion, mediation of cellular functions, and implantable materials are addressed. Future developments in the field of biomedical applications of layer-by-layer assembly are also discussed.
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Digital Object Identifier (DOI)
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10.1002/adma.200600113
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Published Online: 16 Nov 2006
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17. 碳纳米管分子动力学模拟综述 Vtq'o*yE
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Over the rescent years, numerical modelling and computer-based simulation of the properties of carbon nanotubes have become the focal points of research in cmoputational nano-science and its associated fields of computational condensed matter physics and materials modelling. Modelling of the mecahanical, thermal and transport properties of nanoutbes via numerical simulaitons forms the central part of this research, concerned with the nano-scale mechanics and nano-sacle thermadynamics of nanotubes, and nano-scale adsorption ,storage and flow properties in nanotubes. A review of these properties, obtained via computational modelling studies, is presented here.:QRx3H"|)F]'`8{Z1T
详细信息：Physics Reports 390 (2004) 235-452 H&VH"Ny5IN5B d
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18. [2006]Nanowire-Based Electrochemical Biosensors
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纳米线电化学传感器的综述。9w{ @7L+T
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We review recent advances in biosensors based on one-dimensional (1-D) nanostructure field-effect transistors (FET). Specifically, we address the fabrication, functionalization, assembly/alignment and sensing applications of FET based on carbon nanotubes, silicon nanowires and conducting polymer nanowires. The advantages and disadvantages of various fabrication, functionalization, and assembling procedures of these nanosensors are reviewed and discussed. We evaluate how they have been used for detection of various biological molecules and how such devices have enabled the achievement of high sensitivity and selectivity with low detection limits. Finally, we conclude by highlighting some of the challenges researchers face in the 1-D nanostructures research arena and also predict the direction toward which future research in this area might be directed.
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Keywords: Nanosensors, Biosensors, Field effect transistors (FETs),Carbon nanotubes, Conducting polymer nanowires, Silicon nanowires, Metallic nanowires, One-dimensional nanostructures, Assembly, Magnetic alignment,Functionalization
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DOI: 10.1002/elan.200503449
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Electroanalysis 18, 2006, No. 6, 533 – 550 4{ We%PW
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19. (2003)Advances in the Synthesis of Inorganic Nanotubes
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Angew. Chem. Int. Ed. 2003, 42, 5124–5132
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In analogy to graphite, nanoparticles of inorganic compounds with lamellar two-dimensional structure, such as MoS2, are not stable against folding, and can adopt nanotubular and fullerene-like structures,
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nicknamed inorganic fullerenes or IF.V arious applications for such nanomaterials were proposed.F or instance, IF-WS2 nanoparticles were shown to have beneficial effects as solid lubricants and as part of tribological surfaces.Further applications of IF for hightensile- strength fibers, hydrogen storage, rechargeable batteries, catalysis, and in nanotechnology are being contemplated.This Minireview highlights some of the latest developments in the synthesis of inorganic nanotubes and fullerene-like structures.Some structural aspects and properties of IF, which are distinct from the bulk materials, are briefly discussed. ~b YZ5]@
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20. (2006)Advanced functional properties in nanoporous coordination frameworksJ Q/gV
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Chem. Commun., 2006, 695–700
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Coordination framework materials display a rich array of host–guest properties and are notable amongst porous media for their extreme chemical versatility. This article highlights a number of areas where specific function has been incorporated into these framework host lattices.
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21. (2005)Synthesis of classes of ternary metal oxide... Jr,f m[ qC3A.[ X
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Nanoscale structures, such as nanoparticles, nanorods, nanowires, nanocubes, and nanotubes, have attracted extensive synthetic attention as a result of their novel size-dependent properties. Ideally, the net result of nanoscale synthesis is the production of structures that achieve monodispersity, stability, and crystallinity with a predictable morphology. Many of the synthetic
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methods used to attain these goals have been based on principles derived from semiconductor technology, solid state chemistry, and molecular inorganic cluster chemistry. We describe a
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number of advances that have been made in the reproducible synthesis of various ternary oxide
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nanomaterials, including alkaline earth metal titanates, alkali metal titanates, bismuth ferrites,
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ABO4-type oxides, as well as miscellaneous classes of ternary metal oxides. 3N;j&_c K c V y"a^
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22. (2006)Solution-Based Synthetic Strategies for 1-D...
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是清华李亚栋弟子王训对自己的文章的综述，值得一看，犹如其博士毕业论文一样。 tj.~%Xu z
One-dimensional (1-D) nanostructures of materials have received great research attention because of their unique photochemistry, photophysical, and electron-transport properties different from those of bulky or nanoparticle materials. One of the main challenges in this field is how to precisely control the sizes, dimensionalities, compositions, and crystal structures of materials in nanoscale. This review summarizes the recent progress in the solution-based routes to prepare 1-D nanostructures, highlighting the contribution from this laboratory. Crystal structure as one of the inherent factors that may determine the growth behavior of the nanocrystals is emphasized in this paper. Particularly compounds with layered structures or anistropic crystal structures are given special attention in the*`8|2zVY1J6L^
controlled growth of 1-D nanostructures. This review aims to present a relatively general understanding of the correlation between the crystal structure and growth behavior of materials under solution-based conditions and show how to choose appropriate conditions for the growth of 1-D nanostructures. Sur~'Th]
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23. (2005)Semiconductor Nanowires for Subwavelength Photonics Integration6?,W#_'S0HYC I
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J. Phys. Chem. B 2005, 109, 15190-15213
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是杨培东对一唯纳米材料的光电子上的应用的评论，只能看看，估计能做这方面的不多。1T!q%z8mW9M n6uA
This article focuses on one-dimensional (1D) semiconductor subwavelength optical elements and assesses~}[ CGb K
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their potential use as active and passive components in photonic devices. An updated overview of their optical properties, including spontaneous emission, ultrafast carrier dynamics, cavity resonance feedback (lasing), photodetection, and waveguiding, is provided. The ability to physically manipulate these structures on surfaces to form simple networks and assemblies is the first step toward integrating chemically synthesized nanomaterials into photonic circuitry. These high index semiconductor nanowires are capable of efficiently guiding light through liquid media, suggesting a role for such materials in microfluidics-based biosensing applications. 8JB3s1f*{;N/s
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24. (2005)Shape Control of Semiconductor and Metal Oxide I(Q5e rv
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Angew. Chem. Int. Ed. 2006, 45, 3414 – 3439
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Inorganic nanocrystals with tailored geometries exhibit unique shapedependent phenomena and subsequent utilization of them as building blocks for the fabrication of nanodevices is of significant interest. Herein, we review the recent developments in the shape control of colloidal nanocrystals with a focus on the scientifically and technologically important semiconductor and metal oxide nanocrystals obtained by nonhydrolytic synthetic methods. Many structurally unprecedented motifs have been discovered including polyhedrons, rods and wires, plates and prisms, and other advanced shapes such as branched rods, stars, inorganic dendrites, and dumbbells. The currently proposed shape-guiding mechanisms are presented and the important pioneering studies on the assembly of shape-controlled nanocrystals into ordered superlattices and the fabrication of prototype advanced nanodevices are discussed. ^k`9kSM*v}
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25. (2006)Recent Progress in the Synthesis of Porous
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Adv. Mater. 2006, 18, 2073–2094] z ]r(TX
In this review, the progress made in the last ten years concerning the synthesis of porous carbon materials is summarized. Porous carbon materials with various pore sizes and pore structures have been synthesized using several different routes. Microporous activated carbons have been synthesized through the activation process. Ordered microporous carbon materials have been synthesized using zeolites as templates. Mesoporous carbons with a disordered pore structure have been synthesized using various methods, including catalytic activation using metal species, carbonization of polymer/polymer blends, carbonization of organic aerogels, and template synthesis using silica nanoparticles. Ordered mesoporous carbons with various pore structures have been synthesized using mesoporous silica materials such as MCM-48, HMS, SBA-15, MCF, and MSU-X as templates. Ordered mesoporous carbons with graphitic pore walls have been synthesized using soft-carbon sources that can be converted to highly ordered graphite at high temperature. Hierarchically ordered mesoporous carbon materials have been synthesized using various designed silica templates. Some of these mesoporous carbon materials have successfully been used as adsorbents for bulky pollutants, as electrodes for supercapacitors and fuel cells, and as hosts for enzyme immobilization. Ordered macroporous carbon materials have been synthesized using colloidal crystals as templates. One-dimensional carbon nanostructured materials have been fabricated using anodic aluminum oxide (AAO) as a template. i;{/lHg;I
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26. (2005)ChemistryofCarbonNanotubes ^`f
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这篇文章对搞CNTs化学修饰的朋友应该有作用的。google下提名就可以知道在哪了。HM)~"qD
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Contentsil0`1P\2e
1. Introduction 1
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2. Covalent Approaches 12`[xA7z;H+w V
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2.1. Sidewall Halogenation of CNT 1
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2.2. Hydrogenation 3
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2.3. Cycloadditions 3 \i,b:_ha s!W
2.4. Radical Additions 5
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2.5. Electrophilic Additions 7
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2.6. Addition of Inorganic Compounds 7~1u@k-z'@1ty8U+R3Pg
2.7. Ozonolysis 7$W%zJ[m'Tb
2.8. Mechanochemical Functionalizations 7
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2.9. Plasma Activation 8/f D#y5vccby3z
2.10. Nucleophilic Additions 8q [ZE.k7G
2.11. Grafting of Polymers 8
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2.11.1. “Grafting to” Method 8
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2.11.2. “Grafting from” Method 8
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3. Defect Site Chemistry 9
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3.1. Amidation/Esterification Reactions 9 }+^,X {s%t
3.2. Attachment of Biomolecules 11
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3.3. Grafting of Polymers to Oxidized Nanotubes 12pR,sY @h0C
4. Noncovalent Interactions 135N,G%{l}2}lU ~;re
4.1. Polymer Composites 13 Y*}8w)N;^']
4.1.1. Epoxy Composites 13
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4.1.2. Acrylates 14KL,u;g1y8T W.A#Fl)F6r&y$P
4.1.3. Hydrocarbon Polymers 154|6H9Q W0Ka
4.1.4. Conjugated Polymers 15}n YJ2}7o2f(@
4.1.5. Other Nanotube-Polymer Composites 16
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4.2. Interactions with Biomolecules and Cells 18,otyq-l/{#sX5u
5. Endohedral Filling 21
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5.1. Encapsulation of Fullerene Derivatives and5V-wU'I+k
Inorganic Species
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5.2. Encapsulation of Biomolecules 22
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5.3. Encapsulation of Liquids 23/aj"}8p {$R
6. Concluding Remarks 23^ D| W5A5I`6V%h]
7. Acknowledgments 23
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8. References 23 @$_(X `Yvt?&I
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27. (2006)Electron diffraction from carbon nanotubesW;|
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Rep. Prog. Phys. 69 (2006) 2761–2821 ye#D!WR;J J!`D:b
L.C. Qin 对自己若干年的研究单壁管衍射所做的总结。他的方法更具操作实用性。基本解决了所有问题。 下载栏目提供全文。oA;~,q F4Or:^
Electron diffraction from carbon nanotubes
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W M Keck Laboratory for Atomic Imaging and Manipulation, Department of Physics and Astronomy and Curriculum in Applied and Materials Sciences, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3255, USAl hVh.`1I Y [!Aj
E-mail: [email]lcqin@unc.edu[/email]OnY/R+VA F'i
Received 17 July 2006
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Published 20 September 2006
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Online at stacks.iop.org/RoPP/69/2761 t#t0W
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Abstract
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The properties of a carbon nanotube are dependent on its atomic structure. The atomic structure of a carbon nanotube can be defined by specifying its chiral indices, (u, v), that specify its perimeter vector (chiral vector), with which the diameter and helicity are also determined. The fine electron beam available in a modern transmission electron microscope (TEM) offers a unique probe to reveal the atomic structure of individual nanotubes. This review covers two aspects related to the use of the electron probe in the TEM for the study of carbon nanotubes: (a) to understand the electron diffraction phenomena for interpretation of the electron diffraction patterns of carbon nanotubes and (b) to obtain the chiral indices, (u, v), of the carbon nanotubes from the electron diffraction patterns. For a nanotube of a given structure, the electron scattering amplitude from the carbon nanotube is first described analytically in closed form using the helical diffraction theory. From a known structure as given by the chiral indices (u, v), its electron diffraction pattern can be calculated and understood. The reverse problem, i.e. assignment of the chiral indices from an electron diffraction pattern of a carbon nanotube, is approached from the relationship between the electron scattering intensity distribution and the chiral indices (u, v). We show that electron diffraction patterns can provide an accurate and unambiguous assignment of the chiral indices of carbon nanotubes. The chiral indices (u, v) can be read indiscriminately with a high accuracy from the intensity distribution on the principal layer lines in an electron diffraction pattern.R r8GF.d
The symmetry properties of electron diffraction from carbon nanotubes and the electron diffraction from deformed carbon nanotubes are also discussed in detail. It is shown that 2mm symmetry is always preserved for single-walled carbon nanotubes, but it can break down for multiwalled carbon nanotubes under some special circumstances. Finally, determination of the handedness of carbon nanotubes using electron diffraction is reviewed and discussed with both theoretical analysis and experimental examples.
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29. (1999)Electron diffraction and microscopy of nanotubes qH#UX`ctE/n&C4l
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RepProgPhys 62-1471。)Y\ ^uOH
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Amelinckx, A Lucas and P Lambin.3个最早开始理论研究碳管衍射的牛人合写的综述文章。模拟碳管衍射入门必读。]y6a){Q q1G$Y
Electron diffraction and microscopy of nanotubes S Amelinckx†, A Lucas‡ and P Lambin‡E D Qw8} y XY
† EMAT-Laboratory, Department of Physics, University of Antwerp (RUCA), Groenenborgerlaan 171, B-2020
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Antwerpen, Belgium ‡ Department of Physics, University Faculty Namur, rue de Bruxelles 61, B-5000 Namur, Belgium!N,r.?"L R(o
Received 8 December 1998
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Abstract
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Carbon nanotubes were discovered by electron microscopy in the carbon soot produced in an electric arc between graphite electrodes, as used in the production of fullerenes. Details of this microstructure have been studied mainly by the combined use of electron microscopic imaging and electron diffraction. Due to the small size of the tubes, diffraction patterns of single tubes, which are the most informative ones, can only be obtained by electron diffraction. For a complete interpretation of the observed diffraction effects a detailed theory is required. Successively more refined approximations of the theory allow us to understand the origin of the different features of the diffraction patterns. The most complete kinematical theory for the diffraction by single shell chiral straight tubes is obtained by the direct summation of the complex amplitudes of the waves scattered by the carbon atoms arranged on a helically wound graphene network. The closed form analytical expressions deduced in thisway make it possible to compute the geometry and the intensity distribution of diffraction space. Diffraction patterns are computed as planar sections of this diffraction space. High-resolution electron microscopic images reveal the geometry of individual graphene sheets and their defects in multishell tubes. As well as the characteristic features of straight nanotubes those of helix shaped tubes are also discussed.
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It is shown how the combined use of electron diffraction and electron microscopy makes it possible to completely characterize the geometry of carbon nanotubes.
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30. (2006)Physics of carbon nanotube electronic devices
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纳米器件入门文章。比较全面。 fj]G2l.J
Physics of carbon nanotube electronic devicesa h3{V/o
M P Anantram1 and F L´eonard2 w A#c v Vk l9@
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1 Center for Nanotechnology, NASA Ames Research Center, Mail Stop: 229-1,
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Moffett Field, CA 94035-1000, USA
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2 Nanoscale Science and Technology Department, Sandia National Laboratories, Livermore,nBj$F eih+E
CA 94551, USA
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E-mail: [email]anant@arc.nasa.gov[/email] and [email]fleonar@sandia.gov[/email]
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Abstract
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Carbon nanotubes (CNTs) are amongst the most explored one-dimensional nanostructures and have attracted tremendous interest from fundamental science and technological perspectives. Albeit topologically simple, they exhibit a rich variety of intriguing electronic properties, such as metallic and semiconducting behaviour. Furthermore, these structures are atomically precise, meaning that each carbon atom is still three-fold coordinated without any dangling bonds. CNTs have been used in many laboratories to build prototype nanodevices. These devices include metallic wires, field-effect transistors, electromechanical sensors and displays. They potentially form the basis of future all-carbon electronics. This review deals with the building blocks of understanding the device physics of CNTbased nanodevices. There are many features that make CNTs different from traditional
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materials, including chirality-dependent electronic properties, the one-dimensional nature of electrostatic screening and the presence of several direct bandgaps. Understanding these novel properties and their impact on devices is crucial in the development and evolution of CNT applications.
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1. Introduction 509](_j!WP#F
1.1. Structure of CNTs 509
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1.2. Electronic properties of CNTs 512
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2. Metallic CNTs 515*g(mKY O-F:a
2.1. Introduction 515'i*OK B:~v
2.2. Low bias transport 518
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2.3. High bias transport 521
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2.4. Quantum capacitance and inductance of nanotubes 524
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3. Physics of nanotube/metal contacts 527
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3.1. Introduction 527
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3.2. Role of Fermi level pinning in end-bonded contacts 530
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3.3. Schottky barriers at nanotube/metal contacts 5315Xgk}"o/q&m
3.4. Ohmic contacts to nanotubes 531 q_#n.u$^'z z t
3.5. Metal/oxide/nanotube contacts 532(UBr1m'@H j
4. Electronic devices with semiconducting nanotubes 533
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4.1. Introduction 533
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4.2. Rectifiers 5335M"_4u@)O K7r^5d
4.2.1. Experimental realizations of CNT p–n junctions 533
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4.2.2. Theory of CNT p–n junctions 534 \/O bT uuU r
4.2.3. Metal-semiconductor junctions 537#}!\l0dD m{
4.3. Field effect transistors 538
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4.3.1. CNT transistors with Ohmic contacts 539
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4.3.2. CNT transistors with Schottky contacts 5405ClAG/l9N
5. Electromechanical properties 541
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5.1. Bent nanotubes 541"hA7ydO f
5.2. Effects of uniaxial and torsional strain on electronic properties 542
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5.3. Effect of radial deformation on electronic properties 544j5y ki3[ @!T*ly w
5.4. Devices 546)}9I? H;^'n
6. Field emission 548 W4Bj||$A
6.1. Introduction 548
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6.2. Role of adsorbates and the role of nanotube density in field emission from an
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array 550w;e
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6.3. Devices 551g%~,^o,i
7. Opto-electronic devices 554 ^,]1l
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7.1. Introduction 554
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7.2. Photoconductivity 554
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7.3. Electroluminescence 556*TJb9} r5Z
8. Conclusions 556
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Acknowledgments 558
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References 558 9s td5t
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31. (2005)Some recent developments in the chemical synthesis of inorganic nanotubes
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Chem. Commun., 2005, 5013–5022 | 50130?|^"U(h D2{
Yujie Xiong, Brian T. Mayers and Younan Xia*5e q&US)~3Z3l
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关于纳米管的，但本人觉得这篇文章价值不是很大。但可以给作管管的人个参考。
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Inorganic nanotubes have been a subject of intensive research in the past decade. We recently
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developed a number of synthetic strategies for generating nanotubes from inorganic materials that
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do not have a layered structure. It is the intention of this contribution to provide a brief account8co^W#_ YRH xcQ
of these research activities.
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32. (2006)Optical Properties of ZnO Nanostructures rj4['l+H1F!m ~R
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small 2006, 2, No. 8-9, 944 – 961u3],l2fN Y
Aleksandra B. Djurisˇic´* and Yu Hang Leung
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想必ZnO已经以及正在或将来会养活很多人在，此文章的价值就不言而喻了。本人对ZnO是一点不懂，就是听过王中林老师几次报告。希望对打算作ZnO的人有用。
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From the Contents
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1. Introduction.............945
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2. Spontaneous Emission ................................947
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3. Stimulated Emission 951
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4. Nonlinear Optical Properties................955
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5. Optical Properties of Doped ZnO...............9565C)A#z }N
6. Conclusions and Outlook....................957 4{z/{B9p*ec'e;R"F
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33.(2005)Chemistry and Properties of Nanocrystals of Different Shapes
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Chem. Rev. 2005, 105, 1025-1102
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Clemens Burda,*,†,‡ Xiaobo Chen,† Radha Narayanan,§ and Mostafa A. El-Sayed*,§8f%Hm[:Wy$co
此文章应该是搞纳米材料制备形貌控制的经典文章，说来惭愧，很早下来，但一直没有认真看过。4bMjp4n+{o3V
Contents og8a*oa'N4m;u
1. General Introduction and Comments 1025 @"}8Z6ZYrl4`/{
2. Preparation of Nanostructures of Different Shapes 1027
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2.1. Introduction: Nucleation and Particle Growth 1027 ]T/_:G*^ x+G^3d
2.2. Preparation Methods 1028
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2.2.1. Sol Process 1028HA;ux%]K#Tg4]
2.2.2. Micelles 1031
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2.2.3. Sol-Gel Process 1034
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2.2.4. Chemical Precipitation 1034.\s`%AJ:} R?U
2.2.5. Hydrothermal Synthesis 1036*} _ B6T*h f
2.2.6. Pyrolysis 1036
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2.2.7. Vapor Deposition 1038
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2.3. Growth Mechanism of Nanostructures of Different Shapes 1040
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2.3.1. Effect of Monomer Concentration on the Shape of the Semiconductor QDs 10408I J4B m8N}N r
2.3.2. Vapor-Liquid-Solid Growth for Nanowire by CVD and PVD Methods 1041!Y8km(c&G~8HaL0t9m
2.3.3. Light-Induced Shape Change Mechanism of Metal Nanorods 1042
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3. Surface Chemical Modification of Nanoparticles 1042)Y Y)I Cq&[k
4. Assembly of Nanoparticles 1042,~b R"y NN9_
5. Optical, Thermal, and Electrical Properties of Particles of Different Sizes and Shapes 1047Y
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5.1. Semiconductor Nanoparticles 1047
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5.1.1. Discrete Electronic Structure 1047
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5.1.2. Optical Transitions in Nanostructures of Different Shapes 1048
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5.2. Metallic Nanoparticles 1057
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5.3. High Surface-to-Volume Ratio 1059
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5.4. Melting Point 1060y!? }` J
5.5. Conductivity and Coulomb Blockade 1061
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6. Nonradiative Relaxation of Nanoparticles of Different Shapes 1063U$Mg5bc`s:z
6.1. Nonradiative Relaxation in Metal Nanostructured Systems 1063 W D0\*` h6x
6.1.1. Background 1063
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6.1.2. Theoretical Modeling of the Transient Optical Response 1063`A9XP u\
6.1.3. Electron-Electron Thermalization in Gold Nanoparticles 1063
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6.1.4. Electron-Phonon Relaxation in Gold Nanoparticles 1064
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6.1.5. Shape and Size Dependence on the Electron-Phonon Relaxation Rate 1065Gb"v4a }9h~
6.1.6. Pump Power Dependence of the Electron-Phonon Relaxation Rate 1066,ZE9x-O V
6.2. Nonradiative Relaxation in Semiconductor Nanostructured Systems 1066%gQ] F
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6.2.1. II-VI Semiconductor Systems 1067
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6.2.2. I-VII Semiconductor Systems 1074
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6.2.3. III-V Semiconductor Systems 1074+IBPjg.n
6.2.4. Group IV Semiconductor Systems 1074
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6.2.5. Metal Oxides Systems 1075
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6.2.6. Other Systems 1075
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6.3. Hot Electrons and Lattice Temperatures in Nanoparticles 1076
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6.4. Phonon Bottleneck 1078
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6.5. Quantized Auger Rates 1079mC+Sd4\$dhP/@
6.6. Trapping Dynamics 1079 c9VbL @O'W O5^$P,`
7. Nanocatalysis 1081.a E.{"^7}*X so rn
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7.1. Introduction 1081
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7.2. Homogeneous Catalysis 1081-j x W+[+eE+KC
7.2.1. Chemical Reactions Catalyzed Using Colloidal Transition Metal Nanocatalysts 1083
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7.3. Heterogeneous Catalysis on Support 1086
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7.3.1. Lithographically Fabricated Supported Transition Metal Nanocatalysts 1087
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7.3.2. Chemical Reactions Catalyzed Using Supported Transition Metal Nanocatalysts 1087
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8. Summary 1090:Z~w2l#|
8.1. Reviews 10903Ach4cM R3]m
8.1.1. Synthesis 1090;s o&N3KV-Z5B'D
8.1.2. Properties 1090+^#Q TU5i.w
8.1.3. General 1091
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8.2. Books 1091'e!O/{$Ow3r-G
8.2.1. Metal Nanoparticles 1091 n#Z+K x5Oi}R9D
8.2.2. Semiconductor Nanoparticles 1091
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8.2.3. Carbon Nanotubes and Nanoparticles 1091
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8.2.4. Nanoparticles in General 1092
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9. Acknowledgment 1092 e ?*]s F^8o1B
10. References 1092
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34.(2006)Chemistry of Carbon Nanotubes 4Q
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作CNTs化学修饰的必看文献，g!k3u7R s1CE
具体的可以google下标题，再e－alert时候下的，所以看不到页码。
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Contents
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1. Introduction 1
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2. Covalent Approaches 1G$Z)s7M9u/aY$B
2.1. Sidewall Halogenation of CNT 1at_!dJk
2.2. Hydrogenation 3|c%Mr-z(? u/C
2.3. Cycloadditions 3 h,A7J {.u,P
2.4. Radical Additions 5
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2.5. Electrophilic Additions 7y5^
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2.6. Addition of Inorganic Compounds 7
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2.7. Ozonolysis 7
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2.8. Mechanochemical Functionalizations 7g_Qh
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2.9. Plasma Activation 8
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2.10. Nucleophilic Additions 8
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2.11. Grafting of Polymers 8
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2.11.1. “Grafting to” Method 82} d,l!A v
2.11.2. “Grafting from” Method 8
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3. Defect Site Chemistry 9
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3.1. Amidation/Esterification Reactions 9
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3.2. Attachment of Biomolecules 11
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3.3. Grafting of Polymers to Oxidized Nanotubes 127o [*U%_ RS/i0k r
4. Noncovalent Interactions 132zO wL3H K"{
4.1. Polymer Composites 13
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4.1.1. Epoxy Composites 13 s'j3Z(t
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4.1.2. Acrylates 14(t'|%v+xd^ [/}
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4.1.3. Hydrocarbon Polymers 15$P kfWA F&x)V
4.1.4. Conjugated Polymers 15
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4.1.5. Other Nanotube-Polymer Composites 16
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4.2. Interactions with Biomolecules and Cells 18
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5. Endohedral Filling 21/PH/e:Fay4h7Z
5.1. Encapsulation of Fullerene Derivatives and Inorganic Species 21
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5.2. Encapsulation of Biomolecules 22zd EJ7^;b L
5.3. Encapsulation of Liquids 23O;Wg&C8K#qD V/] Ht
6. Concluding Remarks 23
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7. Acknowledgments 230fW:AO)x
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8. References 23
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35. (2003)One-Dimensional Nanostructures Synthesis, Characterization, and Applications One-Dimensional Nanostructures: Synthesis, Characterization, and Applications
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Advanced Materials
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Volume 15, Issue 5, Date: March, 2003, Pages: 353-389
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Y. Xia, P. Yang, Y. Sun, Y. Wu, B. Mayers, B. Gates, Y. Yin, F. Kim, H. Yan+T]MP6^g(c k2K
此综述称的上是经典之作，是科大两位杰出海外学者夏幼南，杨陪东合作而成。
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是作一惟纳米材料人必看的文章，关于两位作者主页可以看资源导航里面的研究小组。 VItd}*I
Abstract
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This article provides a comprehensive review of current research activities that concentrate on one-dimensional (1D) nanostructures - wires, rods, belts, and tubes - whose lateral dimensions fall anywhere in the range of 1 to 100 nm. We devote the most attention to 1D nanostructures that have been synthesized in relatively copious quantities using chemical methods. We begin this article with an overview of synthetic strategies that have been exploited to achieve 1D growth. We then elaborate on these approaches in the following four sections: i) anisotropic growth dictated by the crystallographic structure of a solid material; ii) anisotropic growth confined and directed by various templates; iii) anisotropic growth kinetically controlled by supersaturation or through the use of an appropriate capping reagent; and iv) new concepts not yet fully demonstrated, but with long-term potential in generating 1D nanostructures. Following is a discussion of techniques for generating various types of important heterostructured nanowires. By the end of this article, we highlight a range of unique properties (e.g., thermal, mechanical, electronic, optoelectronic, optical, nonlinear optical, and field emission) associated with different types of 1D nanostructures. We also briefly discuss a number of methods potentially useful for assembling 1D nanostructures into functional devices based on crossbar junctions, and complex architectures such as 2D and 3D periodic lattices. We conclude this review with personal perspectives on the directions towards which future research on this new class of nanostructured materials might be directed.
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[[i] 本帖最后由 nano-st 于 2008-05-27 19:59 编辑 [/i]]